Transistors IC IC SMD Type Product specification KI7540DP Features TrenchFET Power MOSFET PWM Optimized for High Efficiency Absolute Maximum Ratings TA = 25 N-Channel Symbol Parameter 10 secs P-Channel Steady State 10 secs Unit Steady State Drain-Source Voltage VDS 12 -12 V Gate-Source Voltage VGS 8 8 V Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current 11.8 7.6 -8.9 -5.7 A 9.5 6.1 -7.1 -4.6 A 20 IDM Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range A 2.9 1.1 -2.9 -1.1 A 3.5 1.4 3.5 1.4 W 2.2 0.9 2.2 0.9 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Symbol t 10 sec RthJA Steady State Maximum Junction-to-Case (Drain) Steady State RthJC N-Channel P-Channel Unit Typ Max Typ Max 26 35 26 35 60 85 60 85 3.9 5.5 3.9 5.5 /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC IC SMD Type Product specification KI7540DP Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta IDSS ID(on) Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Gate Resistance RG Turn On Time td(on) Rise Time tr td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time * Pulse test; pulse width Testconditons Symbol trr Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.6 1.5 VDS = VGS, ID = -250 P-Ch -0.6 -1.5 A VDS = 0 V VGS = 8 V N-Ch 100 VDS = 0 V VGS = 8 V P-Ch 100 VDS = 9.6V, VGS = 0 V N-Ch 1 VDS = -9.6V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -20V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 20 VDS -5 V, VGS = -4.5 V P-Ch -20 N-Ch 0.014 0.017 VGS = -4.5 V, ID = -8.9A P-Ch 0.026 0.032 VGS = 2.5 V, ID = 9.8A N-Ch 0.020 0.025 0.043 0.053 VGS = -2.5 V, ID = -6.9A P-Ch VDS = 5 V, ID = 11.8A N-Ch 32 VDS = -5 V, ID = -8.9A P-Ch 23 IS = 2.9A, VGS = 0 V N-Ch 0.77 1.2 IS = -2.9A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 11.5 17 VDS = 6 V, VGS = 4.5V, ID = 11.8A P-Ch 13 20 N-Ch 3.2 P-Channel P-Ch 4.1 VDS = -6 V, VGS = -4.5 V, ID = -8.9A N-Ch 2.5 P-Ch 1.9 N-Ch 1.7 A V nC P-Ch 3.5 N-Ch 30 45 VDD = 6 V, RL = 6 P-Ch 35 55 ID= 1A, VGEN = 4.5V, Rg = 6 N-Ch 50 75 P-Ch 42 65 P-Channel N-Ch 60 90 VDD = -6 V, RL = 6 P-Ch 54 85 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 25 40 P-Ch 17 30 IF =2.9 A, di/dt = 100 A/ N-Ch 40 80 P-Ch 40 80 s nA S N Channel IF = -2.9 A, di/dt = 100 A/ V A VGS = 4.5 V, ID = 11.8A s Unit ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2