TYSEMI KUP75N08

MOSFET
IC
SMDType
Type
DIP
Product specification
KUP75N08
■ Features
● VDS=75V,RDS(on)=0.009Ω@VGS=10V,ID=30A
● VDS=75V,RDS(on)=0.011Ω@VGS=4.5V,ID=20A
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
U nit
Drain- Source Voltage
VDS
75
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current
@ TC =25℃
ID
±75
Continuous Drain Current
@ TC = 125 ℃
ID
±66
Pulsed Drain Current*1
IDM
±240
Power Dissipation Ta = 25℃
PD
250
W
Avalanche Current*1
IAR
±75
A
mJ
Repetitive Avalanche Energy*1
EAR
280
Junction-to-Case
RθJC
0.6
Junction-to-Ambient
R θJA
62.5
TJ,TSTG
-55 to + 175
Operating Junction and Storage Temperature Range
A
℃/W
℃
*1 Duty Cycle ≤ %
1
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
MOSFET
IC
SMDType
Type
DIP
Product specification
KUP75N08
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
Min
V(BR)DSS VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(on)
VGS(th)
Forward Transconductance
gfs
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
Typ
Max
75
V
VGS = 10V, ID = 30A
0.009
VGS = 4.5V, ID = 20A
0.110
VDS = VGS, ID = 250µA
1
VDS = 15V, ID = 30A
30
3
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
1
VDS =60V, VGS = 0V, TJ = 125℃
50
VGS = 20V
100
VGS = -20V
-100
Turn-Off Delay Time
Fall Time
121
VDS = 30 V, VGS = 10 V, ID = 75 A
nC
20
25
11
20
10
20
107
200
22
40
VDD = 30V, RL=0.47Ω ,
ID=75A,VGEN=10V
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
µA
150
Qgd
td(off)
V
nA
td(on)
tr
Ω
S
VDS = 60V, VGS = 0V
IGSS
Gate-to-Source Reverse Leakage
Unit
ns
5600
VGS= 0 V, VDS = 25 V, f = 1 MHz
pF
820
275
Continuous Source Current(Body Diode)
IS
75
Pulsed Source Current ( Body Diode) *2
ISM
240
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25℃, IF = 75A
Reverse RecoveryCharge
Qrr
di/dt = 100A/µs*1
A
TJ = 25℃, IF = 75A, VGS = 0V*1
1.3
V
80
120
ns
0.32
0.54
uC
*1 Pulse width ≤ 300µs; duty cycle ≤ 2%.
*2 Repetitive rating; pulse width limited bymax
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2