Product specification KRF7503 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 2.4 Continuous Drain Current, VGS @ 10V,TA = 70 ID 1.9 Pulsed Drain Current*1 IDM 14 PD 1.25 Continuous Drain Current, VGS @ 10V,Ta = 25 Power Dissipation Ta = 25 *1 Linear Derating Factor 10 Gate-to-Source Voltage VGS 12 Peak Diode Recovery dv/dt*1 dv/dt 5 TJ, TSTG -55 to + 150 R JA 100 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 120A/ s, VDD *2 Surface mounted on FR-4 board, t http://www.twtysemi.com V(BR)DSS,TJ Unit A W mW/ V V/ns /W 150 10sec. [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7503 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current TJ Typ Max 30 V 0.059 ID = 1mA,Reference to 25 V/ VGS = 10V, ID = 1.7A*1 0.135 VGS = 4.5V, ID =0.85A*1 0.222 VDS = VGS, ID = 250 A 1.0 V gfs VDS = 10V, ID = 0.85A*1 1.9 S IGSS Gate-to-Source Reverse Leakage VDS = 24V, VGS = 0V 1.0 VDS = 24V, VGS = 0V, TJ = 125 25 VGS = -20V -100 VGS = 20V 100 Total Gate Charge Qg ID = 1.7A 7.8 12 Gate-to-Source Charge Qgs VDS = 24V 1.2 1.8 Gate-to-Drain ("Miller") Charge Qgd VGS = 10V,*1 2.5 3.8 Turn-On Delay Time td(on) VDD = 15V 4.7 tr ID = 1.7A 10 td(off) RG =6.0 12 tf RD = 8.7 5.3 Input Capacitance Ciss VGS = 0V 210 Output Capacitance Coss VDS = 25V 80 Reverse Transfer Capacitance Crss f = 1.0MHz 32 Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Body Diode) Unit VGS(th) IDSS Gate-to-Source Forward Leakage VGS = 0V, ID = 250 A Min A nA nC ns pF IS 1.25 ISM 14 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD Reverse Recovery Time trr TJ = 25 , IF = 1.7A.VR=10V Reverse RecoveryCharge Qrr di/dt = 100A/ *1 Pulse width 300µs; duty cycle 1.2 V 40 60 ns 48 72 nC TJ = 25 , IS = 1.7A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2 of 2