IC IC SMD Type Product specification KRF7460 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,Ta = 25 ID 12 Continuous Drain Current, VGS @ 10V,TA = 70 ID 10 Pulsed Drain Current*1 IDM 100 Power Dissipation Ta = 25 *1 TA = 70 *1 PD 2.5 1.6 Linear Derating Factor 20 V VGS VDS 20 Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 Junction-to-Ambient R JA Single Pulse Avalanche Energy*3 Avalanche Current *2 *1 Pulse width 400 s; duty cycle JL W W/ Gate-to-Source Voltage R A 0.02 Drain-Source Voltage Junction-to-Drain Lead Unit V 50 /W 20 /W EAS 240 mJ IAR 9.6 A 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 5.2mH,RG = 25 , IAS = 9.6A. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7460 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage Total Gate Charge V 7.2 10 VGS = 4.5V, ID = 9.6A*1 10.5 14 m 1.0 VDS = 16V, ID = 9.6A*1 26 3.0 VDS = 16V, VGS = 0V 20 VDS = 16V, VGS = 0V, TJ = 125 100 VGS = 16V 200 VGS = -16V -200 Qg ID = 9.6A 19 Gate-to-Source Charge Qgs VDS = 10V 6.9 Qgd VGS = 4.5V,*1 6.0 Output Gate Charge Qoss VGS = 0V, VDS = 10V 17 Turn-On Delay Time td(on) Turn-Off Delay Time VDD = 10V 11 tr ID = 9.6A 6.9 td(off) RG =1.8 12 tf VGS=4.5V 4.3 Input Capacitance Ciss VGS = 0V 205. Output Capacitance Coss VDS = 10V 1060 Reverse Transfer Capacitance Crss ƒ= 1.0MHz 150 Fall Time Continuous Source Current Body Diode) V S Gate-to-Drain ("Miller") Charge Rise Time Unit V/ VGS = 10V, ID = 12A*1 VDS = VGS, ID = 250 A Gate-to-Source Reverse Leakage Max 0.089 ID = 1mA,Reference to 25 gfs IGSS Typ 20 VGS = 0V, ID = 250 A TJ VGS(th) IDSS Drain-to-Source Leakage Current Min A nA nC 26 ns pF IS 2.3 ISM 100 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD TJ = 25 , IS = 9.6A, VGS = 0V*1 0.8 TJ = 125 , IS = 9.6A, VGS = 0V*1 0.66 1.3 V Reverse Recovery Time trr TJ = 25 , IF = 9.6A.VR=10V 44 66 ns Reverse RecoveryCharge Qrr di/dt = 100A/ 60 90 nC Reverse Recovery Time trr TJ = 125 , IF = 9.6A.VR=10V 44 66 ns Reverse Recovery Charge Qrr di/dt = 100A/ 64 96 nC *1 Pulse width 400µs; duty cycle s*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2of 2