KEXIN KXT5401

Transistors
SMD Type
Surface Mount PNP Silicon Transistor
KXT5401 (CXT5401)
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
High current (max. 500mA).
Low voltage (max. 150 V).
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
+0.1
2.50-0.1
Features
+0.1
4.00-0.1
+0.1
1.80-0.1
1. Base
0.40
+0.1
-0.1
+0.1
3.00-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-160
V
Collector-emitter voltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
IC
-500
mA
1.2
W
Collector current (DC)
power dissipation
PD
thermal resistance Junction- to-ambient
R
104
JA
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
VCBO
IC=-100
-160
V
Collector to emitter breakdown voltage
VCEO
IC=-1.0mA
-150
V
Emitter to base breakdown voltage
VEBO
IE=-10
-5.0
V
Collector cutoff current
ICBO
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
hFE
VCE(sat)
VBE(sat)
Output capacitance
Cob
Transition frequency
fT
A
A
VCB =- 120 V, IE = 0
-50
nA
VCB =- 120 V, TA=100
-50
A
IC = -1.0 mA; VCE = -5.0 V
50
IC = -10mA; VCE =- 5.0V
60
IC = -50 mA; VCE = -5.0V
50
240
IC =- 10 mA; IB = -1.0mA
-0.2
V
IC = -50 mA; IB = -5.0mA
-0.5
V
IC = -10 mA; IB = -1.0mA
-1.0
V
IC = -50 mA; IB =- 5.0mA
-1.0
V
VCB =-10 V, IE = 0,f=1.0MHz
6.0
pF
300
MHz
IC = -10 mA; VCE =-10V; f = 100 MHz
100
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