TYSEMI KZT2222A

Product specification
KZT2222A
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
+0.2
-0.2
0.1max
+0.05
0.90-0.05
High current (max. 600 mA)
Low voltage (max.40 V).
+0.1
3.00-0.1
+0.15
1.65-0.15
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
2 Collector
1
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
75
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
IC
600
mA
Peak collector current
Collector current
ICM
800
mA
Peak base current
IBM
200
mA
W
Ptot
1
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Total power dissipation Ta
25
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
109
K/W
Thermal resistance from junction to soldering point
Rth(j-s)
28
K/W
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Product specification
KZT2222A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
collector-emitter saturation voltage
base-emitter saturation voltage
VCEsat
VBEsat
Testconditons
Min
Typ
Max
Unit
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 125
10
A
IC = 0; VEB = 5 V
10
nA
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V;Ta = -55
35
IC = 150 mA; VCE = 1 V *
50
IC = 150 mA; VCE = 10 V *
100
IC = 500 mA; VCE = 10 V *
40
300
IC = 150 mA; IB = 15 mA
300
mV
IC = 500 mA; IB = 50 mA
1
V
1.2
V
IC = 500 mA; IB = 50 mA
2
V
0.6
IC = 150 mA; IB = 15 mA
Collector capacitance
Cc
IE = iE = 0; VCB = 10 V; f = 1 MHz
8
pF
Emitter capacitance
Ce
25
pF
Turn-on time
ton
IC = iC = 0; VEB = 500 mV; f = 1 MHz
ICon = 150 mA; IBon = 15 mA;
IBoff = -15 mA
35
ns
Delay time
td
10
ns
Rise time
tr
25
ns
Turn-off time
toff
250
ns
Storage time
ts
200
ns
Fall time
tf
60
ns
Transition frequency
fT
* Pulse test: tp
300 ìs; ä
IC = 20 mA; VCE = 20 V; f = 100 MHz
300
MHz
0.02.
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Product specification
500
VCE =5V
DC Current Gain, hFE
400
300
200
100
125℃
25℃
-40℃
0
0.1 0.3
3 10 30 100 300
1
Collector Current, IC (mA)
Base-Emitter Voltage, VBE(SAT) (V)
Base-Emitter Saturation Voltage
vs. Collector Current
β=10
1
-40℃
0.8
25℃
125℃
0.6
0.4
1
500
500
10
100
Collector Current, I C (mA)
Base-Emitter On Voltage, VBE(ON) (V)
DC Current Gain
vs. Collector Current
Collector-Emitter Voltage, VCE(SAT) (V)
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage
vs. Collector Current
0.4
β=10
0.3
125℃
0.2
25℃
0.1
-40℃
1
10
100
Collector Current, IC (mA)
Base-Emitter On Voltage
vs. Collector Current
1
0.8
VCE =5V
-40℃
25℃
0.6
125℃
0.4
0.2
0.1
1
10
Collector Current, IC (mA)
25
Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
Collector-Cutoff Current
vs. Ambient Temperature
20
Col lector Current, ICBO (nA)
500
f=1MHz
100
Capacitance (pF)
VCB=40V
10
1
0.1
16
Cte
12
8
Cob
4
25
50
75
100
125
150
Ambient Temperature, T A(℃)
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0.1
1
10
Reverse Bias Voltage (V)
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100
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Product specification
TYPICAL CHARACTERISTICS
400
Turn On and Turn Off Times
vs. Collector Current
IC
I B1=IB2=10
400
IB1=I B2=
VCC =25V
Time (ns)
VCC =25V
Time (ns)
IC
10
320
320
240
160
240
tS
160
tF
80
tOFF
80
tR
tD
t ON
0
10
Switching Times
vs. Collector Current
100
1000
Collector Current, IC (mA)
0
10
100
1000
Collector Current, I C (mA)
Power Dissipation vs.
Ambient Temperature
Power Dissipation, PC (W)
1
0.75
0.5
0.25
0
0
25
50 75 100 125
Temperature (℃)
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150
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