Product specification KZT2222A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current (max. 600 mA) Low voltage (max.40 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V IC 600 mA Peak collector current Collector current ICM 800 mA Peak base current IBM 200 mA W Ptot 1 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Total power dissipation Ta 25 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 109 K/W Thermal resistance from junction to soldering point Rth(j-s) 28 K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Product specification KZT2222A Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE collector-emitter saturation voltage base-emitter saturation voltage VCEsat VBEsat Testconditons Min Typ Max Unit IE = 0; VCB = 60 V 10 nA IE = 0; VCB = 60 V; Tj = 125 10 A IC = 0; VEB = 5 V 10 nA IC = 0.1 mA; VCE = 10 V 35 IC = 1 mA; VCE = 10 V 50 IC = 10 mA; VCE = 10 V 75 IC = 10 mA; VCE = 10 V;Ta = -55 35 IC = 150 mA; VCE = 1 V * 50 IC = 150 mA; VCE = 10 V * 100 IC = 500 mA; VCE = 10 V * 40 300 IC = 150 mA; IB = 15 mA 300 mV IC = 500 mA; IB = 50 mA 1 V 1.2 V IC = 500 mA; IB = 50 mA 2 V 0.6 IC = 150 mA; IB = 15 mA Collector capacitance Cc IE = iE = 0; VCB = 10 V; f = 1 MHz 8 pF Emitter capacitance Ce 25 pF Turn-on time ton IC = iC = 0; VEB = 500 mV; f = 1 MHz ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA 35 ns Delay time td 10 ns Rise time tr 25 ns Turn-off time toff 250 ns Storage time ts 200 ns Fall time tf 60 ns Transition frequency fT * Pulse test: tp 300 ìs; ä IC = 20 mA; VCE = 20 V; f = 100 MHz 300 MHz 0.02. http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 Product specification 500 VCE =5V DC Current Gain, hFE 400 300 200 100 125℃ 25℃ -40℃ 0 0.1 0.3 3 10 30 100 300 1 Collector Current, IC (mA) Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter Saturation Voltage vs. Collector Current β=10 1 -40℃ 0.8 25℃ 125℃ 0.6 0.4 1 500 500 10 100 Collector Current, I C (mA) Base-Emitter On Voltage, VBE(ON) (V) DC Current Gain vs. Collector Current Collector-Emitter Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs. Collector Current 0.4 β=10 0.3 125℃ 0.2 25℃ 0.1 -40℃ 1 10 100 Collector Current, IC (mA) Base-Emitter On Voltage vs. Collector Current 1 0.8 VCE =5V -40℃ 25℃ 0.6 125℃ 0.4 0.2 0.1 1 10 Collector Current, IC (mA) 25 Emitter Transition and Output Capacitance vs. Reverse Bias Voltage Collector-Cutoff Current vs. Ambient Temperature 20 Col lector Current, ICBO (nA) 500 f=1MHz 100 Capacitance (pF) VCB=40V 10 1 0.1 16 Cte 12 8 Cob 4 25 50 75 100 125 150 Ambient Temperature, T A(℃) http://www.twtysemi.com [email protected] 0.1 1 10 Reverse Bias Voltage (V) 4008-318-123 100 3 of 4 Product specification TYPICAL CHARACTERISTICS 400 Turn On and Turn Off Times vs. Collector Current IC I B1=IB2=10 400 IB1=I B2= VCC =25V Time (ns) VCC =25V Time (ns) IC 10 320 320 240 160 240 tS 160 tF 80 tOFF 80 tR tD t ON 0 10 Switching Times vs. Collector Current 100 1000 Collector Current, IC (mA) 0 10 100 1000 Collector Current, I C (mA) Power Dissipation vs. Ambient Temperature Power Dissipation, PC (W) 1 0.75 0.5 0.25 0 0 25 50 75 100 125 Temperature (℃) http://www.twtysemi.com 150 [email protected] 4008-318-123 4 of 4