Transistors IC SMD Type Product specification CXT2907A Features High current (max.600mA) Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -600 mA Power dissipation PD 1.2 W Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Thermal Resistance èJA 104 http://www.twtysemi.com [email protected] /W 4008-318-123 1 of 3 Transistors IC SMD Type Product specification CXT2907A Electrical Characteristics Ta = 25 Parameter Collector-base cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Testconditons ICBO IEBO hFE VCEsat VBEsat Turn-on time ton Delay time td Rise time tr Turn-off time toff Storage time ts Fall time tf Transition frequency fT http://www.twtysemi.com Max Unit IE = 0; VCB = -50 V Min -10 nA IE = 0; VCB = -50 V; Tj = 125 -10 A IC = 0; VEB = -5 V -50 nA IC = -0.1 mA; VCE = -10 V 75 IC = -1 mA; VCE = -10 V 100 IC = -10 mA; VCE = -10 V 100 IC = -150 mA; VCE = -10 V 100 IC = -500 mA; VCE = -10 V 50 Typ 300 IC = -150 mA; IB =-15mA -0.4 V IC = -500 mA; IB = -50 mA -1.6 V IC = -150 mA; IB = -15 mA -1.3 V IC = -500 mA; IB = -50 mA -2.6 V 45 ns 10 ns 40 ns 100 ns 80 ns VCC=30V, VBE = -0.5V,I C=-150mA, I B1 =-15mA VCC=-6.0V,I C=-150mA, I B1= I B2 = -15mA 30 IC = -50 mA; VCE = -20 V; f = 100 MHz [email protected] 200 4008-318-123 ns MHz 2 of 3 Transistors IC SMD Type Product specification Transistors CXT2907A SMD Type 500 VCE = 5V 400 125 °C 300 200 100 0 0.1 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 0 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 500 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 - 40 °C 25 °C 125 °C VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 20 100 V CB = 35V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRE NT (mA) 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) http://www.twtysemi.com 125 [email protected] 16 12 C ib 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 4008-318-123 50 3 of 3