TYSEMI CXT2907A

Transistors
IC
SMD Type
Product specification
CXT2907A
Features
High current (max.600mA)
Low voltage (max.60V)
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-600
mA
Power dissipation
PD
1.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Thermal Resistance
èJA
104
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Transistors
IC
SMD Type
Product specification
CXT2907A
Electrical Characteristics Ta = 25
Parameter
Collector-base cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol Testconditons
ICBO
IEBO
hFE
VCEsat
VBEsat
Turn-on time
ton
Delay time
td
Rise time
tr
Turn-off time
toff
Storage time
ts
Fall time
tf
Transition frequency
fT
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Max
Unit
IE = 0; VCB = -50 V
Min
-10
nA
IE = 0; VCB = -50 V; Tj = 125
-10
A
IC = 0; VEB = -5 V
-50
nA
IC = -0.1 mA; VCE = -10 V
75
IC = -1 mA; VCE = -10 V
100
IC = -10 mA; VCE = -10 V
100
IC = -150 mA; VCE = -10 V
100
IC = -500 mA; VCE = -10 V
50
Typ
300
IC = -150 mA; IB =-15mA
-0.4
V
IC = -500 mA; IB = -50 mA
-1.6
V
IC = -150 mA; IB = -15 mA
-1.3
V
IC = -500 mA; IB = -50 mA
-2.6
V
45
ns
10
ns
40
ns
100
ns
80
ns
VCC=30V, VBE = -0.5V,I C=-150mA,
I B1 =-15mA
VCC=-6.0V,I C=-150mA, I B1= I B2 = -15mA
30
IC = -50 mA; VCE = -20 V; f = 100 MHz
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200
4008-318-123
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MHz
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Transistors
IC
SMD Type
Product specification
Transistors
CXT2907A
SMD Type
500
VCE = 5V
400
125 °C
300
200
100
0
0.1
25 °C
- 40 °C
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
β = 10
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
500
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
125 °C
0.1
- 40 °C
0
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
1
500
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
- 40 °C
25 °C
125 °C
VCE = 5V
0.2
0
0.1
1
10
I C - COLLECTOR CURRE NT (mA)
25
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
100
V CB = 35V
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
10
100
I C - COLLECTOR CURRE NT (mA)
10
1
0.1
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
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125
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16
12
C ib
8
4
0
0.1
C ob
1
10
REVERSE BIAS VOLTAGE (V)
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