Transistors IC SMD Type Product specification BSR17A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 40 V). +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 100 mA Total power dissipation Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BSR17A Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Max Unit IE = 0 A; VCB = 30 V Testconditons 50 nA IE = 0 A; VCB = 30 V; Tj = 150 5 ìA 50 nA Emitter cutoff current IEBO IC = 0 A; VEB = 6 V DC current gain * hFE IC = 10 mA VCE = 1 V; collector-emitter saturation voltage * base-emitter saturation voltage * VCEsat VBEsat Min Typ 100 300 IC = 10 mA; IB = 1 mA; 200 mV IC = 50 mA; IB = 5 mA; 200 mV 850 mV IC = 10 mA; IB = 1 mA; 650 950 mV Collector capacitance Cc IE = ie = 0 A; VCB = 5 V; f = 1 MHz IC = 50 mA; IB = 5 mA; 4 pF Emitter capacitance Ce IC = ic = 0 A; VEB = 500 mV; f = 1 MHz 8 pF Transition frequency fT IC = 10 mA; VCE = 20 V; f = 100 MHz Noise figure NF Turn-on time ton Delay time 300 IC = 100 ìA; VCE = 5 V; RS = 1 kÙ;f = 10 Hz to 15.7 kHz ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA MHz 5 dB 65 ns td 35 ns Rise time tr 35 ns Turn-off time toff 240 ns Storage time ts 200 ns Fall time tf 50 ns * Pulse test: tp 300 ìs; d 0.02. Marking Marking U92 OR 54 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2