TYSEMI BSR17A

Transistors
IC
SMD Type
Product specification
BSR17A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Low voltage (max. 40 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
High current (max. 100 mA).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
100
mA
Total power dissipation
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BSR17A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Max
Unit
IE = 0 A; VCB = 30 V
Testconditons
50
nA
IE = 0 A; VCB = 30 V; Tj = 150
5
ìA
50
nA
Emitter cutoff current
IEBO
IC = 0 A; VEB = 6 V
DC current gain *
hFE
IC = 10 mA VCE = 1 V;
collector-emitter saturation voltage *
base-emitter saturation voltage *
VCEsat
VBEsat
Min
Typ
100
300
IC = 10 mA; IB = 1 mA;
200
mV
IC = 50 mA; IB = 5 mA;
200
mV
850
mV
IC = 10 mA; IB = 1 mA;
650
950
mV
Collector capacitance
Cc
IE = ie = 0 A; VCB = 5 V; f = 1 MHz
IC = 50 mA; IB = 5 mA;
4
pF
Emitter capacitance
Ce
IC = ic = 0 A; VEB = 500 mV; f = 1 MHz
8
pF
Transition frequency
fT
IC = 10 mA; VCE = 20 V; f = 100 MHz
Noise figure
NF
Turn-on time
ton
Delay time
300
IC = 100 ìA; VCE = 5 V; RS = 1 kÙ;f = 10
Hz to 15.7 kHz
ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA
MHz
5
dB
65
ns
td
35
ns
Rise time
tr
35
ns
Turn-off time
toff
240
ns
Storage time
ts
200
ns
Fall time
tf
50
ns
* Pulse test: tp
300 ìs; d
0.02.
Marking
Marking
U92 OR 54
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2