Product specification 2PB1219A Features High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Peak collector current ICM -1 A Peak base current IBM -200 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 http://www.twtysemi.com [email protected] K/W 4008-318-123 1 of 2 Product specification 2PB1219A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO Emitter cut-off current IEBO IC = 0; VEB = -4 V DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS hFE IC = -150 mA; VCE = -10 V; * Min Typ IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 150 85 120 170 Max Unit -100 nA -5 ìA -100 nA 170 240 340 Collector-emitter saturation voltage VCE(sat) IC = -300 mA; IB = -30 mA; * -600 mV Base-emitter saturation voltage VBE(sat) IC = -300 mA; IB = -30 mA; * -1.5 V 15 pF Collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS fT IC = 50 mA; VCE = -10 V;f = 100 MHz;* * Pulse test: tp 300 ìs; ä 100 120 140 MHz 0.02. hFE Classification TYPE 2PB1219AQ 2PB1219AR 2PB1219AS Marking DQ DR DS http://www.twtysemi.com [email protected] 4008-318-123 2 of 2