TYSEMI KZT2955CZT2955

SMD Type
Product specification
KZT2955 (CZT2955)
SOT-223
Features
Unit: mm
+0.2
3.50-0.2
6.50
+0.2
-0.2
Low voltage (max. 60V).
+0.1
3.00-0.1
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
High current (max. 6A).
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
2 Collector
1
3
2
3 Emitter
+0.1
0.70-0.1
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-100
V
Collector - emitter votage
VCER
-70
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-7
V
IC
-6
A
Base current
IB
-3
A
Power dissipation
PD
2
W
Collector current
Thermal resistance,Junctiion-to-ambient
R
62.5
JA
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to emitter breakdown voltage
VCEO
IC=-30mA
-60
V
Collector to emitter breakdown voltage
VCER
IC=-30mA,RBE=100
-70
V
ICEO
VCE=-30V
ICEV
VCE=-100V,VEB=-1.5V
1.0
mA
IEBO
VEB = -7.0 V
-5.0
mA
Collctor cutoff current
Emitter cutoff current
DC current gain
hFE
-700
IC =- 4.0A; VCE =-4.0 V
20
IC = -6.0A; VCE = -4.0V
5.0
A
70
Collector to emitter saturation voltage
VCE(sat) IC = -4.0A; IB =- 400mA
-1.1
V
Base to emitter ON voltage
VBE(on)
-1.5
V
Transition frequency
http://www.twtysemi.com
fT
VCE=-4.0V,IC=-4.0A
IC=- 500mA; VCE =-10V; f = 1.0 MHz
[email protected]
2.5
4008-318-123
MHz
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