Product specification 2SA1015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 VCEO:=-50V(min.),IC=-150mA(max.) 0.55 High voltage and high current +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low niose: NF=1dB(Typ.) at f=1KHz 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic= -100 -50 V Collector-emitter breakdown voltage VCEO Ic= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage VEBO IE= -100 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 A Emitter cut-off current IEBO VEB=- 5V , IC=0 -0.1 A hFE VCE=-6V, IC= -2mA DC current gain A, IE=0 A, IC=0 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V Transition frequency fT VCE=-10V, IC= -1mA,f=30MHz 80 MHz hFE Classification BA Marking Rank hFE L 130 H 200 http://www.twtysemi.com 200 400 [email protected] 4008-318-123 1 of 1