SMD Type Product specification MMBF170 Features · · · · · · Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant (Note 2) D E G Mechanical Data H · · Case: SOT-23 · · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · SOT-23 D K M Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 Terminal Connections: See Diagram L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M 0.085 0.180 a 0° 8° J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 L Drain Gate Marking: (See Page 2) K6Z All Dimensions in mm Ordering & Date Code Information: See Page 2 Source Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol MMBF170 Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous Pulsed ID 500 800 mA Pd 300 1.80 mW mW/°C RqJA 417 K/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, 2. No purposefully added lead. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification MMBF170 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 70 ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ ¾ ¾ 5.0 5.3 W VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 40 pF Output Capacitance Coss ¾ 11 30 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Time ton ¾ ¾ 10 ns Turn-Off Time toff ¾ ¾ 10 ns OFF CHARACTERISTICS (Note 3) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: 3. VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W Short duration test pulse used to minimize self-heating effect. Ordering Information (Note 4) Device Packaging Shipping MMBF170-7-F SOT-23 3000/Tape & Reel K6Z YM Marking Information K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D http://www.twtysemi.com [email protected] 4008-318-123 2 of 2