Product specification DMP2305U Features Mechanical Data • • • • • • • • • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) • • • • Drain D Gate Internal Schematic Top View S G Source Top View Ordering Information (Note 4) Part Number DMP2305U-7 DMP2305UQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. and 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) <1000ppm antimony compounds. Marking Information 23P Date Code Key Year Code Month Code 2009 W Jan 1 http://www.twtysemi.com 2010 X Feb 2 Mar 3 YM NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET 23P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMP2305U Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State Units V V IDM Value -20 ±8 -4.2 -3.4 -10 Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.5 RDS (ON) ⎯ Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| ⎯ -0.9 60 90 113 ⎯ V Static Drain-Source On-Resistance 45 60 87 9 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.2A VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A Ciss Coss Crss RG ⎯ ⎯ ⎯ 727 69 64 23 ⎯ ⎯ ⎯ Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.6 1.4 1.2 14.0 13.0 53.8 23.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: TJ = 25°C mΩ S pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = -20V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -4V, ID = -3.5A VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A 3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2