Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • • • Drain SOT23 D Gate Source Top View S G Equivalent Circuit Top View Pin Configuration Ordering Information (Note 3) Part Number DMN3112S-7 DMN3112SQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. MN4 Date Code Key Year Code 2008 V Month Code Jan 1 2009 W Feb 2 http://www.twtysemi.com 2010 X Mar 3 YM Marking Information 2011 Y Apr 4 May 5 [email protected] MN4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z Jun 6 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O Nov N 2017 E Dec D 1 of 2 Product specification DMN3112S Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 4) Drain Current (Note 4) Body-Diode Continuous Current (Note 4) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Value 30 ±20 5.8 4.2 20 2.0 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 VGS(th) 1.3 1.9 47 92 4.7 0.78 112 |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 1.1 S V Ciss Coss Crss ⎯ ⎯ ⎯ 268 73 50 ⎯ ⎯ ⎯ pF pF pF RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol 2.2 57 nA V mΩ Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.2A VDS = 5V, ID = 4.2A VGS = 0V, IS = 2.0A VDS = 5V, VGS = 0V f = 1.0MHz 2. Device mounted on FR-4 PCB. t ≤5 sec. 3. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2