Product specification PMV30UN µTrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23. 1.2 Features ■ Surface mount package ■ Fast switching. 1.3 Applications ■ Battery management ■ High-speed switches. 1.4 Quick reference data ■ VDS ≤ 20 V ■ Ptot ≤ 1.9 W ■ ID ≤ 5.7 A ■ RDSon ≤ 36 mΩ 2. Pinning information Table 1: Pinning - SOT23 simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol d 3 g 1 2 Top view MBB076 s MSB003 SOT23 http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV30UN µTrenchMOS™ ultra low level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage (DC) - ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 5.7 A Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 3.65 A - 23.1 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Ptot total power dissipation - 1.9 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.4 A http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV30UN µTrenchMOS™ ultra low level FET 4. Characteristics Table 3: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V Tj = 25 °C 0.45 0.7 - V Tj = 150 °C 0.25 0.4 - V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA - 10 100 nA Tj = 25 °C - 30 36 mΩ Tj = 150 °C - 48 57.6 mΩ VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8 - 36 43 mΩ VGS = 1.8 V; ID = 1 A; Figure 7 and 8 - 44 63 mΩ ID = 5 A; VDD = 10 V; VGS = 4.5 V; Figure 13 - 7.4 - nC Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 VDS = 20 V; VGS = 0 V IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 2 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge - 1.2 - nC Qgd gate-drain (Miller) charge - 1.8 - nC Ciss input capacitance - 460 - pF Coss output capacitance - 100 - pF Crss reverse transfer capacitance - 70 - pF td(on) turn-on delay time - 7 - ns tr rise time - 13 - ns td(off) turn-off delay time - 53 - ns tf fall time - 13 - ns - 0.81 1.2 V VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 VDD = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 1.7 A; VGS = 0 V; Figure 12 http://www.twtysemi.com [email protected] 3 of 3