Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Low threshold voltage 1.3 Applications Battery-powered motor control High-speed switching in set top box power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 20 V ID drain current Tsp = 25 °C; VGS = 4.5 V; see Figure 2; see Figure 3 - - 5.9 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 - - 2 W VGS = 2.5 V; ID = 1 A; Tj = 25 °C; see Figure 9; see Figure 10 - 44 53 mΩ VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C; see Figure 9; see Figure 10 - 31 37 mΩ Static characteristics RDSon drain-source on-state resistance http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV31XN N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S SOT23 (TO-236AB) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package PMV31XN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV31XN %M4 [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 20 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage ID drain current -12 12 V Tsp = 100 °C; VGS = 4.5 V; see Figure 2 - 3.75 A Tsp = 25 °C; VGS = 4.5 V; see Figure 2; see Figure 3 - 5.9 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 23.7 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 - 2 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C - 1.7 A Source-drain diode IS source current http://www.twtysemi.com Tsp = 25 °C [email protected] 2 of 3 Product specification PMV31XN N-channel TrenchMOS FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 18 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 - - 1.8 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 8 0.35 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8 0.5 - 1.5 V VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 100 µA VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VGS = 12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 2.5 V; ID = 1 A; Tj = 25 °C; see Figure 9; see Figure 10 - 44 53 mΩ VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C; see Figure 9; see Figure 10 - 31 37 mΩ ID = 6 A; VDS = 10 V; VGS = 4.5 V; Tj = 25 °C; see Figure 11 - 5.8 - nC - 1.4 - nC - 1.7 - nC - 410 - pF - 115 - pF - 80 - pF - 10 - ns - 15 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 25 - ns tf fall time - 12 - ns - 0.75 1.2 V VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 12 VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 1.5 A; VGS = 0 V; Tj = 25 °C; see Figure 13 [email protected] 3 of 3