Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V - - -1.2 A - 170 210 mΩ drain current ID [1] VGS = -4.5 V; Tamb 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) http://www.twtysemi.com [email protected] S 017aaa257 1 of 4 Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMV160UP Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV160UP NH% [1] % = placeholder for manufacturing site code http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID peak drain current IDM total power dissipation Ptot -8 8 V VGS = -4.5 V; Tamb 25 °C [1] - -1.2 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.8 A - -4 A [2] - 335 mW [1] - 480 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C - 2170 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.5 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C - 170 210 mΩ VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C - 265 328 mΩ VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C - 210 270 mΩ VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C - 280 380 mΩ VDS = -5 V; ID = -1.2 A; Tj = 25 °C - 3.7 - S VDS = -10 V; ID = -1 A; VGS = -4.5 V; Tj = 25 °C - 3.3 4 nC - 1 - nC - 0.5 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A - 365 - pF - 42 - pF - 30 - pF - 7 - ns - 26 - ns turn-off delay time - 35 - ns fall time - 17 - ns - -0.7 -1.2 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = -0.5 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4