TYSEMI PMV160UP

Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 1.8 V RDSon rated
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 High-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-8
-
8
V
-
-
-1.2
A
-
170
210
mΩ
drain current
ID
[1]
VGS = -4.5 V; Tamb 25 °C
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
http://www.twtysemi.com
[email protected]
S
017aaa257
1 of 4
Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
PMV160UP
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV160UP
NH%
[1]
% = placeholder for manufacturing site code
http://www.twtysemi.com
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2 of 4
Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
drain current
ID
peak drain current
IDM
total power dissipation
Ptot
-8
8
V
VGS = -4.5 V; Tamb 25 °C
[1]
-
-1.2
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-0.8
A
-
-4
A
[2]
-
335
mW
[1]
-
480
mW
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
2170
mW
Tj
junction temperature
Tsp = 25 °C
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-0.5
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
http://www.twtysemi.com
[email protected]
3 of 4
Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
-
170
210
mΩ
VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C
-
265
328
mΩ
VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C
-
210
270
mΩ
VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C
-
280
380
mΩ
VDS = -5 V; ID = -1.2 A; Tj = 25 °C
-
3.7
-
S
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
Tj = 25 °C
-
3.3
4
nC
-
1
-
nC
-
0.5
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
-
365
-
pF
-
42
-
pF
-
30
-
pF
-
7
-
ns
-
26
-
ns
turn-off delay time
-
35
-
ns
fall time
-
17
-
ns
-
-0.7
-1.2
V
Source-drain diode
VSD
source-drain voltage
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IS = -0.5 A; VGS = 0 V; Tj = 25 °C
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