Product specification PMV117EN µTrenchMOS™ enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Logic level threshold ■ Subminiature surface-mounted package ■ Very fast switching 1.3 Applications ■ Battery management ■ High-speed switch ■ Low power DC-to-DC converter 1.4 Quick reference data ■ VDS ≤ 30 V ■ RDSon ≤ 117 mΩ (VGS = 10 V) ■ ID ≤ 2.5 A ■ Ptot ≤ 0.83 W 2. Pinning information Table 1: Pinning Pin Description 1 gate (G) 2 source (S) 3 drain (D) Simplified outline Symbol G 1 2 SOT23 http://www.twtysemi.com D 3 [email protected] mbb076 S 1 of 3 Product specification PMV117EN µTrenchMOS™ enhanced logic level FET 3. Ordering information Table 2: Ordering information Type number PMV117EN Package Name Description Version TO-236AB plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 2.5 A Tsp = 100 °C; VGS = 10 V; Figure 2 - 1.6 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 10 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 0.8 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 3.3 A http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV117EN µTrenchMOS™ enhanced logic level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 10 µA; VGS = 0 V Tj = 25 °C 30 37 - V Tj = −55 °C 27 - - V 1.5 2 - V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C IDSS drain-source leakage current Tj = 150 °C 1.1 - - V Tj = −55 °C - - 2.7 V - 0.01 0.5 µA VDS = 24 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; Figure 6 and 8 Tj = 25 °C VGS = 4.5 V; ID = 500 mA; Figure 6 and 8 Tj = 25 °C - - 10 µA - 10 100 nA - 74 117 mΩ 117 190 mΩ 188 300 mΩ - 4.6 - nC - 0.6 - nC - 1.35 - nC - 147 - pF - 65 - pF - 41 - pF - 4 - ns - Tj = 150 °C Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge ID = 0.5 A; VDD = 15 V; VGS = 10 V; Figure 11 Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 7.5 - ns td(off) turn-off delay time - 18 - ns tf fall time - 13 - ns VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 13 VDD = 15 V; RL = 15 Ω; VGS = 10 V Source-drain diode VSD source-drain (diode forward) voltage IS = 0.83 A; VGS = 0 V; Figure 12 - 0.7 1.2 V trr reverse recovery time IS = 1 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V - 69 - ns http://www.twtysemi.com [email protected] 3 of 3