Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Battery management High-speed switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 30 V ID drain current Tsp = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 - - 5.4 A VGS gate-source voltage -20 - 20 V - 35 42 mΩ Static characteristics drain-source on-state resistance RDSon VGS = 10 V; ID = 2 A; Tj = 25 °C; see Figure 9; see Figure 10 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SOT23 (TO-236AB) http://www.twtysemi.com [email protected] mbb076 S 1 of 3 Product specification PMV45EN N-channel TrenchMOS logic level FET 3. Ordering information Table 3. Ordering information Type number Package PMV45EN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV45EN %4N [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 30 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V ID drain current Tsp = 100 °C; VGS = 10 V; see Figure 1 - 3.4 A Tsp = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 - 5.4 A - 21.6 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Ptot total power dissipation Tsp = 25 °C; see Figure 2 - 2 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C Source-drain diode IS source current Tsp = 25 °C - 1.7 A ISM peak source current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.9 A http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV45EN N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8 1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 8 0.6 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 - - 2.2 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 2 A; Tj = 25 °C; see Figure 9; see Figure 10 - 35 42 mΩ VGS = 10 V; ID = 2 A; Tj = 150 °C; see Figure 9; see Figure 10 - 59.5 71.4 mΩ VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C; see Figure 9; see Figure 10 - 45 54 mΩ ID = 3 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C; see Figure 11 - 9.4 - nC - 1.2 - nC - 1.9 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C - 350 - pF - 70 - pF - 50 - pF - 5 - ns - 7 - ns turn-off delay time - 16 - ns fall time - 5.5 - ns - 0.79 1.2 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 1.5 A; VGS = 0 V; Tj = 25 °C; see Figure 12 [email protected] 3 of 3