Product specification 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F SUMMARY V(BR)DSS=30V; RDS(ON)=0.22V; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM61N03FTA 7 8mm embossed 3000 units ZXM61N03FTC 13 8mm embossed 10000 units DEVICE MARKING • N03 http://www.twtysemi.com [email protected] 1 of 3 Product specification ZXM61N03F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage Gate Source Voltage V DSS 30 V V GS ±20 V Continuous Drain Current (V GS=10V; T A=25°C)(b) (V GS=10V; T A=70°C)(b) ID 1.4 1.1 A Pulsed Drain Current (c) I DM 7.3 A Continuous Source Current (Body Diode) (b) IS 0.8 A Pulsed Source Current (Body Diode) I SM 7.3 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXM61N03F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 30 V I D=250µA, V GS=0V 1 µA V DS=30V, V GS=0V 100 nA V GS=± 20V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=10V, I D=0.91A V GS=4.5V, I D=0.46A S V DS=10V,I D=0.46A 1.0 0.22 0.30 0.87 DYNAMIC (3) Input Capacitance C iss 150 pF Output Capacitance C oss 35 pF Reverse Transfer Capacitance C rss 15 pF Turn-On Delay Time t d(on) 1.9 ns Rise Time tr 2.5 ns Turn-Off Delay Time t d(off) 5.8 ns Fall Time tf 3.0 ns Total Gate Charge Qg 4.1 nC Gate-Source Charge Q gs 0.4 nC Gate-Drain Charge Q gd 0.63 nC Diode Forward Voltage (1) V SD 0.95 V T J=25°C, I S=0.91A, V GS=0V Reverse Recovery Time (3) t rr 11.0 ns T J=25°C, I F=0.91A, di/dt= 100A/µs Reverse Recovery Charge (3) Q rr 3.5 nC V DS=25 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D=0.91A R G=6.2Ω, R D=16Ω (refer to test circuit) V DS=24V,V GS=10V, I D =0.91A (refer to test circuit) SOURCE-DRAIN DIODE NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3