TYSEMI ZXM61N03F

Product specification
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N03F
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.22V; ID=1.4A
DESCRIPTION
This new generation of high density MOSFETs from TY utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
Top View
ZXM61N03FTA
7
8mm embossed
3000 units
ZXM61N03FTC
13
8mm embossed
10000 units
DEVICE MARKING
•
N03
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
ZXM61N03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate Source Voltage
V DSS
30
V
V GS
±20
V
Continuous Drain Current (V GS=10V; T A=25°C)(b)
(V GS=10V; T A=70°C)(b)
ID
1.4
1.1
A
Pulsed Drain Current (c)
I DM
7.3
A
Continuous Source Current (Body Diode) (b)
IS
0.8
A
Pulsed Source Current (Body Diode)
I SM
7.3
A
Power Dissipation at T A=25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at T A=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
http://www.twtysemi.com
[email protected]
2 of 3
Product specification
ZXM61N03F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (3)
g fs
30
V
I D=250µA, V GS=0V
1
µA
V DS=30V, V GS=0V
100
nA
V GS=± 20V, V DS=0V
V
I D =250µA, V DS= V GS
Ω
Ω
V GS=10V, I D=0.91A
V GS=4.5V, I D=0.46A
S
V DS=10V,I D=0.46A
1.0
0.22
0.30
0.87
DYNAMIC (3)
Input Capacitance
C iss
150
pF
Output Capacitance
C oss
35
pF
Reverse Transfer Capacitance
C rss
15
pF
Turn-On Delay Time
t d(on)
1.9
ns
Rise Time
tr
2.5
ns
Turn-Off Delay Time
t d(off)
5.8
ns
Fall Time
tf
3.0
ns
Total Gate Charge
Qg
4.1
nC
Gate-Source Charge
Q gs
0.4
nC
Gate-Drain Charge
Q gd
0.63
nC
Diode Forward Voltage (1)
V SD
0.95
V
T J=25°C, I S=0.91A,
V GS=0V
Reverse Recovery Time (3)
t rr
11.0
ns
T J=25°C, I F=0.91A,
di/dt= 100A/µs
Reverse Recovery Charge (3)
Q rr
3.5
nC
V DS=25 V, V GS=0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D=0.91A
R G=6.2Ω, R D=16Ω
(refer to test
circuit)
V DS=24V,V GS=10V,
I D =0.91A
(refer to test
circuit)
SOURCE-DRAIN DIODE
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
http://www.twtysemi.com
[email protected]
3 of 3