TYSEMI ZXMN2A14F

Product specification
ZXMN2A14F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 20V : RDS(on)=0.06 ; ID= 4.1A
DESCRIPTION
This new generation of trench MOSFETs from Ty utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXMN2A14FTA
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
7”
8mm
3000 units
DEVICE MARKING
• 214
http://www.twtysemi.com
[email protected]
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Product specification
ZXMN2A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
20
V
Gate-Source Voltage
V GS
⫾12
V
ID
4.1
A
3.3
A
3.4
A
Continuous Drain Current @ V GS =4.5V; T A =25°C (b)
@ V GS =4.5V; T A =70°C (b)
@ V GS =4.5V; T A =25°C (a)
LIMIT
UNIT
Pulsed Drain Current (c)
I DM
19
A
Continuous Source Current (Body Diode) (b)
IS
1.7
A
Pulsed Source Current (Body Diode) (c)
I SM
19
A
PD
1
W
8
mW/°C
Power Dissipation at T A =25°C
(a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
Operating and Storage Temperature Range
T j , T stg
1.5
W
12
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R ⍜JA
125
°C/W
(b)
R ⍜JA
82
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
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Product specification
ZXMN2A14F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Drain-Source Breakdown Voltage
V (BR)DSS
20
Zero Gate Voltage Drain Current
I DSS
1
␮A
Gate-Body Leakage
I GSS
100
nA
V DS =20V, V GS =0V
V GS =⫾12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
I =250␮A, V DS = V GS
Static Drain-Source On-State
R DS(on)
0.060
⍀
V GS =4.5V, I D =3.4A
0.110
STATIC
V
0.7
Resistance (1)
I D =250␮A, V GS =0V
D
⍀
V GS =2.5V, I D =2.5A
g fs
9.4
S
V DS =10V,I D =3.4A
Input Capacitance
C iss
544
pF
Output Capacitance
C oss
132
pF
C rss
85
pF
Turn-On Delay Time
t d(on)
4.0
ns
Rise Time
tr
5.3
ns
V DD = 10V, V GS = 4.5V
I D = 1A
Forward Transconductance (1) (3)
DYNAMIC (3)
Reverse Transfer Capacitance
V DS = 10V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-Off Delay Time
t d(off)
16.6
ns
Fall Time
tf
9.5
ns
Total Gate Charge
Qg
6.6
nC
Gate-Source Charge
Q gs
1.2
nC
V DS =10V,V GS = 4.5V,
Q gd
2.1
nC
I D =3.4A
V SD
0.85
Gate-Drain Charge
R G ≅ 6.0⍀
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
0.95
V
T J =25°C, I S =(3.3)A,
V GS =0V
Reverse Recovery Time (3)
t rr
11.4
ns
Reverse Recovery Charge (3)
Q rr
4.6
nC
T J =25°C, I F =(1.7)A,
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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