Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC - DC Converters • Power Management Functions • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3A01FTA 7” 8mm 3000 units ZXMN3A01FTC 13” 8mm 10000 units PINOUT DEVICE MARKING • 7N3 Top View http://www.twtysemi.com [email protected] 1 of 3 Product specification ZXMN3A01F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) ID Pulsed Drain Current (c) I DM Continuous Source Current (Body Diode) (b) IS LIMIT 30 UNIT V 20 V 2.0 1.6 1.8 A 8 A 1.3 A Pulsed Source Current (Body Diode) (c) I SM 8 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN3A01F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) 30 I D =250µA, V GS =0V 0.5 µA V DS =30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V I =250µA, V DS = V GS Ω Ω V GS =10V, I D =2.5A V GS =4.5V, I D =2.0A V DS =4.5V,I D =2.5A 1 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) V 0.106 0.12 0.18 g fs 3.5 S Input Capacitance C iss 190 pF Output Capacitance C oss 38 pF Reverse Transfer Capacitance C rss 20 pF Turn-On Delay Time t d(on) 1.7 ns Rise Time tr 2.3 ns Turn-Off Delay Time t d(off) 6.6 ns Fall Time tf 2.9 ns Gate Charge Qg 2.3 nC Total Gate Charge Qg 3.9 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 0.9 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr D DYNAMIC (3) V DS =25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D =2.5A R G @ 6.0Ω, V GS =10V V DS =15V,V GS =5V, I D =2.5A V DS =15V,V GS =10V, I D =2.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =1.7A, V GS =0V 17.7 ns T J =25°C, I F =2.5A, di/dt= 100A/µs 13.0 nC NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3