WILLAS FM120-M SE3406 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. N-Channel Enhancement Mode Field Effect Transistor power loss, high efficiency. • Low • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. DESCRIPTION • Ultra high-speed switching. The•SE3406 use advanced trench technology to provide excellent Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 low gate charge. This device is suitable for use as a RDS(ON) and • RoHS product for packing code suffix "G" Halogen product for packing code suffix "H" load switch or infree PWM applications. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN Mechanical data 0.040(1.0) 0.024(0.6) • Terminals :Platedfor terminals, solderable per MIL-STD-750 Halogen free product packing code suffix “H” Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry Pb-Free package is available : UL94-V0 rated flame retardant • Epoxy Case : Molded plastic, • RoHS product for packing SOD-123H code suffix ”G” , Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code im MARKING: R6RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 30 40 Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% noted) Maximum ( Ta=25℃ unless otherwise Maximum DCratings Blocking Voltage 20 VDC Maximum Average Forward Rectified Current Parameter Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Drain-Source Voltage Gate-Source Voltage Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Continuous Drain Current Drain Current-Pulsed (note Storage Temperature Range TSTG 1) Power Dissipation CHARACTERISTICS Thermal Resistance from Junction to Ambient Maximum Forward Voltage at 1.0A DC 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 ±20 ID-55 to +125 40 120 IDM 3.6 15 - 65 to +175 PD 0.35 Unit 30 V V A -55 to +150 A W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Junction Average Temperature Maximum Reverse Current at @T A=25℃ Rated DC Temperature Blocking Voltage Storage VGS 15 50 Value Symbol VDS RΘJA Typical Thermal Resistance (Note 2) IO IFSM 14 40 @T A=125℃ IR RθJA TJ TSTG 0.50 357 0.70 150 0.85 0.5 -55~ +150 10 ℃/W 0.9 ℃ 0.92 ℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3406 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage thermal resistance.noted) Electrical characteristics (Tacurrent =25℃ and unless otherwise • Low profile surface mounted application in order to optimize board space. Parameter Symbol SOD-123H Test Condition Min • Low power loss, high efficiency. STATIC PARAMETERS • High current capability, low forward voltage drop. • High surge capability. Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA • Guardring for overvoltage protection. Zero gate voltage drain current IDSS VDS =24V,VGS = 0V switching. • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • Gate-body leakage current IGSS VGS =±20V, VDS = 0V • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Gate threshold voltage VGS(th) 0.012(0.3) Typ. 30 V 1 0.071(1.8) 0.056(1.4) ±100 nA 3 V 65 mΩ 1 Halogen free product for packing code suffix "H"VGS =10V, ID =3.6A Drain-source on-resistance (note 2) RDS(on) Mechanical data VGS =4.5V, ID =2.8A Output capacitance • Mounting Position : Any Coss • Weight : Approximated 0.011 gramCrss Reverse transfer capacitance Gate resistance mΩ 0.040(1.0) 0.024(0.6) 3 S 1 0.031(0.8) Typ. ina ry Method 2026 Input capacitance Ciss • Polarity : Indicated by cathode band µA 105 rated • Epoxy : UL94-V0 Forward tranconductance (note 2) flame retardant gFS VDS =5V, ID =3.6A Case : Molded plastic, SOD-123H • Diode forward voltage VSD IS=1A , • Terminals :Plated terminals, solderable per MIL-STD-750 DYNAMIC PARAMETERS (note 3) Units 0.130(3.3) VDS =VGS, ID =250µA • RoHS product for packing code suffix "G" Typ Max 0.146(3.7) V 0.031(0.8) Typ. Dimensions in inches and 375 (millimeters)pF VDS =15V,VGS =0V,f =1MHz 57 pF 39 pF Rg ELECTRICAL VDS =0V,VGS =0V,f =1MHz MAXIMUM RATINGS AND CHARACTERISTICS Ω 6 im SWITCHING (note 3) unless otherwise specified. Ratings atPARAMETERS 25℃ ambient temperature Single phase half wave, 60Hz, resistive of inductive Turn-on delay time td(on) load. load, derate current by 20% For capacitive Turn-on rise time RATINGS Turn-off delay time Marking Code tr RL=2.2Ω,R =3Ω 12 GEN 13 20 30 Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Pr el VRRM 14 40 Notes : tf Repetitive Rating : Pulse width limited by maximum junction temperature. 15 50 16 60 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave These parameters have no way to verify. IFSM Typical Thermal Resistance (Note 2) RΘJA superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.9 ns 20.1 18 2.6 80 56 80 10 ns 100 ns 115 150 120 200 70 105 140 100 150 200 1.0 30 2. Pulse Test : Pulse width ≤300µs, duty cycle≤ 0.5%. 3. ns SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M td(off) Maximum Recurrent Peak Reverse Voltage Turn-off fall time 1. VGS=10V,VDS=15V, 4.6 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3406 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) .063(1.60) .047(1.20) Mechanical data 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry Method 2026 .110(2.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range VRRM 12 20 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) Dimensions in inches and (millimeters) ina • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP.