WILLAS FM120-M TK3904LLD03 THRU WBFBP-03D Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTORbetter reverse leakage current and thermal resistance. • Low profile surface mounted application in order to DESCRIPTION optimize board space. NPN Epitaxial Silicon Transistor power loss, high efficiency. • Low • High current capability, low forward voltage drop. FEATURES • High surge capability. for overvoltage protection. • Guardring Epitaxial Planar Die Construction Ultra high-speed switching. • Complementary PNP Type Available (TK3906LLD03) Silicon epitaxial planar • Ultra-Small Surface Mount Package chip, metal silicon junction. • Lead-free parts meet environmental standards of Also Available in Lead Free Version C SOD-123H WBFBP-03D 0.146(3.7) TOP 0.130(3.3) (1.0×1.0×0.5) unit: mm 0.012(0.3) Typ. B E 0.071(1.8) 0.056(1.4) C 1. BASE 2. EMITTER MIL-STD-19500 /228 • RoHS product for packing code suffix "G" APPLICATION Halogen free product for packing code suffix "H" BACK 3. COLLECTOR General Purpose Amplifier, switching Mechanical data For portable •equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, Epoxy : UL94-V0 rated flame retardant DVD-ROM, Note book PC, etc.) • Case : Molded plastic, SOD-123H , • Terminalsis:Plated terminals, solderable per MIL-STD-750 Pb-Free package available E B0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Method 2026 RoHS product for packing code suffix ”G” • Polarity : Indicated by cathode band Halogen free product for packing code suffix “H” Position : Any • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MARKING:1N C 1N MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS(T a=25℃ unless otherwise noted) im Ratings at 25℃ Parameter ambient temperature unless Value otherwise specified. Symbol Unit Single phase half wave, 60Hz, resistive of inductive load. Collector-Base Voltage 60 For capacitive load, derate current by 20% VCBO VCEO Collector-Emitter Voltage RATINGS E V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 6 V 12 A 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 Pr el Voltage VEBO MarkingEmitter-Base Code 40 B V IC Maximum Recurrent Peak Reverse Voltage Collector Current -Continuous 0.2 VRRM PC Maximum RMS Voltage Collector Dissipation 0.1 VRMS W 14 21 28 35 42 Maximum DC Blocking Voltage 150 VDC ℃ 20 30 40 50 60 TJ Junction Temperature Tstg Maximum Average Forward Rectified Current Storage Temperature IO -55~150 IFSM Peak Forward Surge Current 8.3 ms single half sine-wave ℃ ELECTRICAL CHARACTERISTICS superimposed on rated load (JEDEC method) (Ta=25℃ unless otherwise specified) Typical Thermal Resistance (Note 2) RΘJA Parameter Typical Junction Capacitance (Note 1) Collector-base breakdown voltage Operating Temperature Range Symbol CJ Test conditions -55 to +125 V(BR)CBO TJIC=10μA,IE=0 Storage Temperature Range Collector-emitter breakdown IC=1mA,IB=0 V(BR)CEO TSTG voltage Emitter-base breakdown voltage CHARACTERISTICS Collector cut-off current Maximum Forward Voltage at 1.0A DC NOTES: FE(3) 1- Measured at 1 MHZ and applied reverse voltage ofh4.0 VDC. 2- Thermal Resistance From Junction to Ambient 60 Max Unit -55 to +150 V -40 65 to +175 V 6 hFE(4) VCE=30V,VEB(off)=3V VF hFE(2) DC current gain Typ V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- IEBO Emitter cut-offAverage current Maximum Reverse Current at @T A=25℃ hFE(1) @T A=125℃ Rated DC Blocking Voltage 40 Min120 IE=10μA,IC=0 V(BR)EBO ICEX 1.0 30 0.50 0.05 0.70 0.85 VEB=5V,IC=0 IR 0.5 VCE=1V,IC=1mA 40 10 70 VCE=1V,IC=10mA 100 VCE=1V,IC=50mA 60 30 VCE=1V,IC=0.1mA 0.1 μA 0.9 μA hFE(5) VCE=1V,IC=100mA Collector-emitter saturation voltage IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V Transition frequency 2012-06 2012-0 fT VCE=20V,IC=10mA,f=100MHz 300 300 VCE(sat)1 0.65 0.92 MHz WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M THRU TK3904LLD03 WBFBP-03D Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to ELECTRICALoptimize CHARACTERISTICS (Ta=25℃ unless otherwise specified) board space. • Low power loss, high efficiency. Parameter Symbol Test conditions voltage drop. • High current capability, low forward surge capability. • High VCB=5V,IE=0,f=1MHz Cob Collector output capacitance VCE=5V,Ic=0.1mA, NF Noise figure • Guardring for overvoltage protection. • Ultra high-speed switching. td Delay time VCC=3V, VBE(off)=-0.5V, junction. • Silicon epitaxial planar chip, metal silicon ICof =10mA , IB1=1mA tr Rise time • Lead-free parts meet environmental standards Storage time Fall time • Min 0.146(3.7) 0.130(3.3) Typ 0.012(0.3) Typ. Max Unit 4 pF 50.071(1.8) dB 350.056(1.4) ns MIL-STD-19500 /228 tS VCC=3V, IC=10mA RoHS product for packing code suffix "G" I = I = 1mA t f Halogen free product for packing code suffix "H" B1 B2 35 ns 200 ns 50 ns Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ina ry Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Pr el Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.