RoHS MMBTA44 D T ,. L SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES PCM: 0.35 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ O IC N 2. 80¡ À0. 05 1. 60¡ À0. 05 unless otherwise specified) R T Symbol C 1. 9 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range Parameter O 0. 95¡ À0. 025 Power dissipation 2. 92¡ À0. 05 TRANSISTOR (NPN) 0. 35 MMBTA44 Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V V(BR)EBO IE=100µA, IC=0 5 V ICBO VCB=400V, IE=0 0.1 µA ICEO VCE=400V 5 µA IEBO VEB= 4V, IC=0 0.1 µA HFE(1) VCE=10V, IC=10 mA 80 HFE(2) VCE=10V, IC=1mA 70 HFE(3) VCE=10V, IC=100 mA 60 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V VBE(sat) IC=10 mA, IB= 1 mA 0.75 V C E L Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage W Base-emitter sataration voltage Transition MARKING 300 VCE=20V, IC=10mA frequency f 50 T MHz f =30MHz 3D WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]