RoHS MPSA55 MPSA55 D T ,. L TRANSISTOR (PNP) FEATURES TO-92 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Collector cut-off current Collector cut-off current DC current gain E Collector-emitter saturation voltage J E Base-Emitter Saturation Voltage Transition frequency O Test N conditions MIN TYP MAX -60 V Ic=-1 mA, IB=0 -60 V V(BR)EBO IE=-0.1mA, IC=0 -4 V ICBO VCB=-60 V, IE=0 -0.1 µA ICEO VCE=-60V, IC=0 -0.1 µA hFE VCE=-1V, IC=-100mA VCE(sat) IC=-100 mA, IB=-10mA -0.25 V VBE VCE=-1V, IC=-100mA -1.2 V fT VCE=-1V, IC=-100mA f=100MHz 100 50 W WEJ ELECTRONIC CO. UNIT Ic=-0.1mA, IB=0 C E L Emitter-base breakdown voltage IC unless otherwise specified) R T Collector-BASE breakdown voltage C O 1 2 3 Http:// www.wej.cn E-mail:[email protected] MHz