RoHS 2SD1758 2SD1758 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Collector cut-off current Emitter cut-off current E Collector-emitter saturation voltage J E Transition frequency N 2 3 O Test conditions MIN TYP MAX 40 V IC=1mA, IB=0 32 V V(BR)EBO IE=50µA, IC=0 5 V ICBO VCB=-20V , IE=0 1 µA IEBO VEB=4V , 1 µA IC=0 hFE VCE= 3V , IC=500mA VCE(sat) IC=2A, IB=0.2A fT VCE= 5V, IE= 50mA,f=100MHz 82 390 0.8 80 W WEJ ELECTRONIC CO. UNIT Ic=50µA , IE=0 C E L Emitter-base breakdown voltage IC C O 1 unless otherwise specified) R T Collector-base breakdown voltage DC current gain D T ,. L TO-252-2 TRANSISTOR (PNP) Http:// www.wej.cn E-mail:[email protected] V MHz