RoHS BD433/435/437 BD433/435/437 D T ,. L TRANSISTOR (NPN) TO-126 FEATURES Power dissipation PCM: 1.25 Collector current ICM: 4 Collector-base voltage V(BR)CBO: BD433 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR A 3. BASE 22 V BD435 32 V BD437 45 V IC Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Emitter-base breakdown voltage Collector cut-off current E J E Emitter cut-off current W DC current gain Collector-emitter saturation voltage V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) Base-emitter voltage VBE Transition frequency fT WEJ ELECTRONIC CO. O Test R T V(BR)CBO C E L Collector-emitter breakdown voltage Collector cut-off current unless otherwise specified) Symbol Collector-base breakdown voltage N C O 123 conditions BD433 Ic=100µA, IE=0 BD435 BD437 BD433 Ic=100mA, IB=0 BD435 BD437 IE=100µA, IC=0 VCB=22V, IE=0 BD433 VCB=32V, IE=0 BD435 VCB=45V, IE=0 BD437 VCE=22V, IE=0 BD433 VCE=32V, IE=0 BD435 VCE=45V, IE=0 BD437 MIN V 22 32 45 V 5 V µA 10 µA 1 µA BD437 0.5 0.6 V BD433/BD435 1.1 BD437 1.2 BD433/BD435 BD437 BD433/BD435 BD437 IC=2A, IB=0.2A VCE=1V, IC=2A 85 40 30 50 40 BD433/BD435 VCE=1V, IC=250mA Http:// www.wej.cn UNIT 1 VCE=1V, IC=500mA VCE=1V, IC=2A MAX 22 32 45 VEB=5V, IE=0 VCE=5V, IC=10mA TYP 3 E-mail:[email protected] V MHz