RoHS BF370 BF370 TRANSISTOR (NPN) FEATURES Power dissipation PCM: D T ,. L TO-92 1. COLLECTOR 0.5 W (Tamb=25℃) 2. BASE Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. EMITTER IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol C 1 2 3 N O unless otherwise specified) O Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4.5 V ICBO VCB= 20V, IE=0 0.4 µA IEBO VEB= 2V, IC=0 0.1 µA hFE VCE= 1V, IC= 10mA Collector-emitter saturation voltage VCE(sat) IC=15mA, IB=1.5 mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=15mA, IB=1.5 mA 1.2 V C E L Collector cut-off current Emitter cut-off current DC current gain J E R T E Transition frequency fT VCE= 10V, IC=10mA f =100MHz 40 500 200 MHz W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]