DATA SHEET UF200~UF2010 SEMICONDUCTOR ULT RAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Unit:inch(mm) DO-15 Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Void-free Plastic in DO-15 package • 2.0 ampere operation at TA=55°C with no thermal runaway • Exceeds environmental standards of MIL-S-19500/228 • Ultra fast switching for high efficiency .140 (3.6) .104 (2.6) DIA. • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment 1.0 (25.4) MIN. substance directive request MECHANICAL DATA .300 (7.6) .230 (5.8) • Case: Glass passivation, DO-15 • Terminals: Axial leads, solderable per MIL-STD-202, Method 208 1.0 (25.4) MIN. .034 (.86) .028 (.71) DIA. • Polarity: Band denotes cathode • Mounting Position: Any • Weight: 0.015 ounce, 0.4 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC J ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. UF200 UF201 UF202 UF204 UF206 UF208 UF2010 UNITS Peak Rev erse Volt age, Pepet itive ; VRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V DC Bl ocking Voltage; VR 50 100 200 400 600 800 1000 V Average Forward Current, Io @TA=55 °C 3. 8” lead l ength, 60Hz, resistive or inductive load 2.0 A 60 A Peak Forward Surge Current IFM (surge) 8.3msec . single half sine- wave super imposed on rated load (JEDEC method) Maximum Forward Voltage VF @2.0A, 25 °C 1.00 1.3 Maxi mum Reverse Current, @ Rated TA =25 °C 1.5 1.7 V 5 µA µA Reverse Voltage TA=100°C 100 Typi cal Junction c apacitance (Note 1) CJ 35 pF Typi cal Junction Resi stance (Note 2) R JA 45 °C/W Reverse Recovery Time 50 IF=.5A, IR=1A, Irr =.25A Operati ng and Storage Temperature Range 75 -55 to +150 ns °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF200~UF2010 trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10 UF200 TYPICAL IFM, Apk 1 UF2010 TJ = 25°C 0.1 0.01 .2 .4 .6 .8 1.0 1.2 1.4 SINGLE PHASE HALF WAVE 60Hz RESISSTIVE OR INDUCTIVE LOAD .375" 9.5mm LEAD LENGTHS 2.0 1.4 1.2 0.8 0.4 0 1.6 25 50 75 100 125 150 175 FORWARD VOLTAGE-VFM(Vpk) AMBIENT TEMPERATURE,°C Fig. 2-FORWARD CHARACTERISTICS Fig. 3-FORWARD CURRENT DERATING CURVE 100 PEAD FORWARD SURGE CURRENT, AMPERES JUNCTION CAPACITANCE, pF 0 2.4 TJ = 25 °C f = 1.0MHz Vsig = 50mVp-p 10 5 1 10 100 REVERSE VOLTAGE, VOLTS 60 48 36 24 12 1 2 4 6 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz Fig. 4-TYPICAL JUNCTION CAPACITANCE http://www.yeashin.com Fig. 5-PEAK FORWARD SURGE CURRENT 2 REV.02 20110725