ACE3400B N-Channel Enhancement Mode MOSFET Description The ACE3400BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS 30V RDS(ON)@VGS=10V, IDS=5.2A, Typ 24mΩ RDS(ON)@VGS=4.5V, IDS=5A, Typ 27mΩ Fast switching speed Low threshold voltage (0.8V) makes this device ideal for portable equipment Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous (Note 1) ID 5.2 Pulsed (Note 2) IDM 30 PD 1 Drain Current Power Dissipation (Note 1) A W Operating and storage junction temperature range TJ,TSTG -55~+150 ℃ Packaging Type SOT-23-3L 3 1 SOT-23-3L Description Function 1 G Gate 2 S Source 3 D Drain 2 VER 1.2 1 ACE3400B N-Channel Enhancement Mode MOSFET Ordering information ACE3400B XX + H Halogen - free Pb - free BM : SOT-23-3L Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Test Conditions Static V(BR)DSS VGS=0V, ID=250µA IDSS VGS(th) IGSS VDS=24V, VGS=0V VGS=VDS, IDS=250µA VGS=±12V, VDS=0V VGS=10V, ID=5.2A VGS=4.5V, ID=5A VGS=2.5V, ID=4A VDS=5V, ID=5A ISD=1A, VGS=0V Drain-source on-state resistance RDS(ON) Forward transconductance Diode forward voltage Turn-on delay time Turn-off delay time Input capacitance Output capacitance Reverse transfer capacitance gFS VSD td(on) td(off) Ciss Coss Crss Min Typ 30 34 0.7 10 0.8 24 27 39 15 0.71 VDS=15V, RL=2.3Ω, VGS=10V, RGEN=3Ω VGS=0V, VDS=15V, f=1.0MHz Max Unit V 1 1 ±100 28 33 52 µA V nA mΩ 1 18 70 697 259 308 S V ns pF 2 Note : 1. DUT is mounted on a 1in FR-4 board with 2oz. Copper in a still air environment at 25° 2. Repetitive rating, pulse width limited by junction temperature. VER 1.2 2 ACE3400B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 3 ACE3400B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE3400B N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3L VER 1.2 5 ACE3400B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6