ACE2305B P-Channel Enhancement Mode Field Effect Transistor Description The ACE2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Features VDS=-20V, ID=-4.3A RDS(ON)<55mΩ @ VGS=-4.5V RDS(ON)<63mΩ @ VGS=-2.5V RDS(ON)<73mΩ @ VGS=-1.8V ESD Protected: 3000V HBM Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current (Continuous) TA=25 OC O TA=70 C Drain Current (Pulse) Power Dissipation O TA=25 C ID -4.3 -3.4 A IDM -32 A PD 1 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 O C Packaging Type SOT-23-3 D 3 1 SOT-23-3 Description 1 Gate 2 Source 3 Drain 2 G S Ordering information ACE2305B XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.4 1 ACE2305B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit On/Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±8V, VDS=0V ±10 nA Static Drain-Source On-Resistance RDS(ON) -20 V VGS=-4.5V, ID=-4A 42 55 VGS=-2.5V, ID=-4A 48 63 VGS=-1.8V, ID=-2A 56 73 -1 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.3 -0.65 Forward Transconductance Maximum Body-Diode Continuous Current Drain Forward Voltage gFS VDS=-5V, ID=-4A 8 16 IS VSD IS=-1A,VGS=0V Switching characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss V S -2.2 A -0.81 -1 V 4.59 5.97 2.14 2.78 2.51 3.26 965.2 1930.4 1604 3208 7716 15432 3452 6904 (3) VDS=-10V, ID=-4A VGS=-4.5V VDD=-10V,RL=2.5Ω ID=-4A, VGEN=-4.5V RG=3Ω Dynamic characteristics mΩ nC ns (3) VDS=-10V, VGS=0V f=1.0MHz 36.45 128.57 pF 15.17 Note: 1. Pulse width limited by maximum junction temperature 2. Pulse test: PW≦300us, duty cycle≦2% 3. For design AID only, not subject to production testing. 4. Switching time is essentially independent of operating temperature. VER 1.4 2 ACE2305B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.4 3 ACE2305B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.4 4 ACE2305B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3 Unit: mm VER 1.4 5 ACE2305B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.4 6