ACE2301B P-Channel Enhancement Mode MOSFET Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package with excellent thermal and electrical capabilities. Features VDS=-20V, VGS 8V, ID=-2.3A RDS(ON) @VGS=-4.5V/ID -2.8A, 100mR(Typ.) RDS(ON) @VGS=-2.5V/ID -2A, 120mR(Typ.) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current Power Dissipation Continuous (1) Pulsed 25 OC O 70 C ID PD -2.3 -10 750 480 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A mW O C Packaging Type SOT-23-3 3 SOT-23-3 Description 1 1 Gate 2 Source 3 Drain 2 VER 1.3 1 ACE2301B P-Channel Enhancement Mode MOSFET Ordering information ACE2301B XX + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20 V Drain Cut-off Current IDSS VDS=-20V, VGS=0V -1 uA Gate-Source Leakage Current IGSS VGS=±8V, VDS=0V ±100 nA On characteristics RDS(ON) VGS=-4.5V, ID=-2.8A 100 130 RDS(ON) VGS=-2.5V, ID=-2A 120 200 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.75 -1.5 Forward Transconductance gFS VDS=-5V, ID=-2.8A Drain-Source On-state Resistance -0.45 mR 6.5 V S Switching characteristics(3) Turn-On Delay Time Turn-Off Delay Time VDD=-6V,RL=6R ID=-1A, VGEN=-4.5V td(off) RG=6R Dynamic characteristics(3) Td(on) Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss 13 25 42 70 ns 415 VDS=-6V, VGS=0V f=1.0MHz 223 pF 87 Drain-source diode characteristics and maximum ratings Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.5 -1.2 V Note: 1. Pulse width limited by maximum junction temperature 2. Pulse test: PW≦300us, duty cycle≦2% 3. For design AID only, not subject to production testing 4. Switching time is essentially independent of operating temperature VER 1.3 2 ACE2301B P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.3 3 ACE2301B P-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 Unit: mm VER 1.3 4 ACE2301B P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 5