ACE ACE2305B

ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features





VDS=-20V, ID=-4A
RDS(ON)<55mΩ @ VGS=-4.5V
RDS(ON)<63mΩ @ VGS=-2.5V
RDS(ON)<83mΩ @ VGS=-1.8V
ESD Protected: 3000V HBM
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Drain Current (Continuous)
TA=25 OC
ID
O
TA=70 C
Drain Current (Pulse)
Power Dissipation
O
TA=25 C
-4
-3.2
A
IDM
-30
A
PD
1.4
W
Operating and Storage Temperature Range TJ,TSTG -55 to 150
O
C
Packaging Type
SOT-23-3L
D
3
SOT-23-3L Description
1
1
Gate
2
Source
3
Drain
2
G
S
Ordering information
ACE2305B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2
1
ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
On/Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
-1
uA
Gate Leakage Current
IGSS
VGS=+8V, VDS=0V
±10
nA
Gate Threshold Voltage
IGS(th)
VGS=VDS, IDS=-250µA
-0.65
-1
nA
VGS=-4.5V, ID=-4A
50
55
VGS=-2.5V, ID=-4A
59
63
VGS=-1.8V, ID=-2A
74
83
-2.0
Static Drain-Source On-Resistance
RDS(ON)
-20
-0.3
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-1
-1.6
Forward Transconductance
Maximum Body-Diode Continuous
Current
Drain Forward Voltage
gFS
VDS=-5V, ID=-4A
8
16
IS
VSD
IS=-1A,VGS=0V
Switching characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
V
S
-2.2
A
-0.8
-1
V
4.59
5.97
2.14
2.78
2.51
3.26
965.2
1930.4
1604
3208
7716
15432
3452
6904
(3)
VDS=-10V, ID=-4A
VGS=-4.5V
VDD=-10V,RL=2.5Ω
ID=-4A, VGEN=-4.5V
RG=3Ω
Dynamic characteristics
mΩ
nC
ns
(3)
VDS=-10V, VGS=0V
f=1.0MHz
36.45
128.57
pF
15.17
Note: 1. Pulse width limited by maximum junction temperature
2. Pulse test: PW≦300us, duty cycle≦2%
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
VER 1.2
2
ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-23-3L
Unit: mm
VER 1.2
5
ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6