AM4940N Analog Power Dual N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 40 27 @ VGS = 4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 8.3 7.3 1 8 2 7 3 6 4 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 o TA=25 C a Continuous Drain Current Pulsed Drain Current o 8.3 ID TA=70 C b Continuous Source Current (Diode Conduction) a IDM ±50 IS 2.3 o TA=25 C a Power Dissipation o Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a t <= 10 sec Steady-State RθJA W 1.3 TJ, Tstg Symbol A 2.1 PD TA=70 C THERMAL RESISTANCE RATINGS Parameter A 6.8 o -55 to 150 Maximum C Units 62.5 o 110 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4940_D AM4940N Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Paramete r Symbol Test Conditions V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 uA VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance IDSS A A rDS(on) Diode Forward Voltage g fs VSD Pulsed Source Current (Body Diode)A ISM Dynamic 30 1 V VDS = 0 V, VGS = 20 V ±100 nA VDS = 32 V, VGS = 0 V 1 25 uA VDS = 32 V, VGS = 0 V, T J = 55oC VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8.3 A VGS = 4.5 V, ID = 7.3 A 20 A 22 27 VDS = 15 V, ID = 8.3 A IS = 2.3 A, VGS = 0 V 40 0.7 5 mΩ S V A b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf 20 VDS = 15 V, VGS = 5 V, ID = 8.3 A 7 7 1317 N-Channel VDS=20V, VGS=0V, f=1MHz 272 pF 169 VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 20 9 70 20 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY nC Publication Order Number: DS-AM4940_D nS AM4940N Analog Power Typical Electrical Characteristics 40 120 10V VD= 5V 6V 35 4.5V ID Drain Current (A) IDSDrain Current (A) 100 80 60 30 25 20 15 40 10 20 5 0 0 0 0.5 1 1.5 2 2.5 3 1 0 VDS(V) 2 3 4 5 6 VGS Gate to Source Voltage (V) Output Characteristics Transfer Characteristics 2 0.06 Capacitance (nF) Ω) ( RDS(ON) resistance 1.8 0.05 0.04 4.5V 0.03 6V 0.02 10V 0.01 1.6 Ciss 1.4 1.2 1 0.8 0.6 Coss 0.4 0 Crss 0.2 0 10 20 30 40 50 60 70 80 90 10 0 0 0 5 10 ID Drain Current (A) 8 VGS(V) 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Capacitance rDS(ON), - On-Resistance Normalized VD = 15V ID = 10A QG, Total Gate Charge (nC) 2 I D = 3.6A VGS = 10V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 T Gate Charge J 25 50 75 100 - Junc t i on T e mpe r a t ur e ( o 125 C) On-Resistance vs. Junction Temperature 3 PRELIMINARY 20 VDS (V) On-Resistance vs. Drain Current 10 15 Publication Order Number: DS-AM4940_D 150 AM4940N Analog Power Typical Electrical Characteristics 0.03 Id=10A 0.025 Ω) ( RDS(ON) Resistance IS - Source Current (A) 100 10 T A= 125o C 1 0.1 0.01 25o C 0.001 0.02 0.015 0.01 0.005 0.0001 0 0 0.2 V 0.4 0.6 0.8 1 1.2 0 - Sour c e - t o- D r a i n V OLT AGE ( V ) SD 4 6 10 On-Resistance vs. Gate-to-Source Voltage 50 2.2 2 8 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 ID = -250mA 1.8 30 Power (W) VGS(th)Variance (V) 2 1.6 1.4 20 10 1.2 0 0.001 1 -50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 Time (sec) o TJ - Temperature ( C) Threshold Voltage Thermal Impedance Normalized Effective Transient 1 0.1 Single Pulse Power D = 0.5 0.2 R q J A (t ) = r(t ) + R q J A 0.1 R q J A = 12 5o C /W 0.0 P(p k ) 0.02 t1 0.01 T J - T A = P t*2R q J A( t ) Dut y C ycle, D = t 1 / t2 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 Square Wave P uls e Duratio n (s ec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM4940_D AM4940N Analog Power Package Information SO-8: 8LEAD H x 45° 5 PRELIMINARY Publication Order Number: DS-AM4940_D