AM30N03-40D Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 26 @ VGS = 10V 30 35 @ VGS = 4.5V ID (A) 34 22 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 30 VDS Drain-Source Voltage V VGS Gate-Source Voltage ±20 a o TC=25 C ID Continuous Drain Current b Pulsed Drain Current a Continuous Source Current (Diode Conduction) a IDM 72 IS 30 o TC=25 C PD Power Dissipation THERMAL RESISTANCE RATINGS Parameter Symbol a A A W 50.0 TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Maximum Junction-to-Case 34 RθJA RθJC Maximum o C Units 50 o 3.0 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM30N03-40_G AM30N03-40D Analog Power SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) gfs VSD 1.0 VDS = 0 V, VGS = 20 V ±100 VDS = 24 V, VGS = 0 V 1 25 o VDS = 24 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 11 A 34 uA A 26 35 VDS = 15 V, ID = 17 A IS = 34 A, VGS = 0 V V nA 22 1.1 mΩ S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 11 A VDS = 15 V, VGS = 0 V, f = 1MHz VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V 4.0 1.1 1.4 720 165 60 16 5 23 3 nC pF nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM30N03-40_G AM30N03-40D Analog Power Typical Electrical Characteristics (N-Channel) 30 TA = -55oC VDS = 5V VGS = 10V 25 6.0V 20 5.0V 4.0V 15 3.0V 10 5 25oC 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 125oC 20 15 10 5 0 0 0 0.5 1 1.5 2 0.5 2.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 2 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 4.5V 1.5 6.0V 1 10V 0.5 0 5 10 15 20 25 f = 1MHz VGS = 0 V 1200 CISS 900 600 COSS 300 CRSS 0 30 0 ID, DRAIN CURRENT (A) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 10 1.6 8 Normalized RDS(on) Vgs Gat e-Source Volt age ( V ) 5 6 4 2 0 VGS = 10V I D = 7A 1.4 1.2 1.0 0 .8 0 .6 0 2 4 6 8 -50 10 0 25 50 75 10 0 12 5 150 TJ Juncation Temperature (C) Qg, Charge (nC) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 PRELIMINARY -2 5 Publication Order Number: DS-AM30N03-40_G AM30N03-40D Analog Power Typical Electrical Characteristics (N-Channel) RDS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 o 1 TA = 125 C o 25 C 0.1 0.01 0.001 0.0001 0.1 ID = 7 A 0.08 0.06 0.04 o TA = 25 C 0.02 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2 Figure 7. Transfer Characteristics 6 50 VDS = VGS ID = -250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 8 10 Figure 8. On-Resistance with Gate to Source Voltage 2.2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) 150 175 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 30 20 10 0 0.001 0.01 TA, AMBIENT TEMPERATURE (oC) Figure 9. Vth Gate to Source Voltage Vs Temperature 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 R qJ A(t) = r(t) + R qJ A R qJ A = 125 /W 0.2 0.1 0.1 0.0 P (pk) 0.02 t1 t2 TJ - TA = P * R qJ A(t) Duty C yc le , D = t1 / t2 0.01 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIM E (s e c ) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM30N03-40_G AM30N03-40D Analog Power Package Information 5 PRELIMINARY Publication Order Number: DS-AM30N03-40_G