AO3421E 30V P-Channel MOSFET General Description Product Summary The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -3A RDS(ON) (at VGS=-10V) < 95mΩ RDS(ON) (at VGS=-4.5V) < 160mΩ Typical ESD protection HBM Class 2 VDS SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: April 2012 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V -18 PD TA=70°C ±20 -2 IDM TA=25°C Power Dissipation B Units V -3 ID TA=70°C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3421E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS，ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -18 VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A gFS Forward Transconductance VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max VGS=0V, VDS=-15V, f=1MHz Units V VDS=-30V, VGS=0V IGSS RDS(ON) Typ µA ±10 µA -2 -2.5 V 78 95 112 135 120 160 mΩ -1 V -1.5 A A 6 -0.8 mΩ S 215 pF 46.5 pF 27.5 pF 9.5 19 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.6 8 nC Qg(4.5V) Total Gate Charge 2.2 4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-3A VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω 0.85 nC 1.2 nC 8 ns 4 ns 13.5 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=500A/µs 9 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: April 2012 www.aosmd.com Page 2 of 5 AO3421E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -10V VDS=-5V -6V -7V 8 -5V 6 -4.5V -ID(A) -ID (A) 15 10 5 -4V 4 -3.5V 2 125°C 25°C VGS=-3.0V 0 0 0 1 2 3 4 0 5 150 Normalized On-Resistance VGS=-4.5V 130 RDS(ON) (mΩ Ω) 2 3 4 5 6 1.8 140 120 110 100 90 VGS=-10V 80 1.6 VGS=-10V ID=-3A 1.4 17 5 2 VGS=-4.5V 10 1.2 ID=-2A 1 0.8 70 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 250 1.0E+01 ID=-3A 230 1.0E+00 210 40 190 1.0E-01 170 150 -IS (A) RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-02 125°C 130 1.0E-03 110 90 1.0E-04 70 25°C 25°C 1.0E-05 50 2 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: April 2012 4 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3421E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-3A 250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 1000 Power (W) -ID (Amps) 10.0 100 10 0.1 TJ(Max)=150°C TA=25°C 10s DC 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: April 2012 www.aosmd.com Page 4 of 5 AO3421E Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: April 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5