AO6810

AO6810
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO6810 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=10V)
VDS
30V
3.5A
RDS(ON) (at VGS=10V)
< 50mΩ
RDS(ON) (at VGS = 4.5V)
< 70mΩ
TSOP6
D1
D2
Top View
G1
1
2
6
5
D1
S2
G2
3
4
D2
S1
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: Mar 2011
Steady-State
Steady-State
±20
V
A
1.15
W
0.73
TJ, TSTG
Symbol
t ≤ 10s
Units
V
20
PD
Junction and Storage Temperature Range
Maximum
30
3
IDM
TA=70°C
S2
3.5
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation B
G2
S1
RθJA
RθJL
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°C
-55 to 150
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VDS=5V, ID=3.5A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2
2.5
V
40
50
61
77
52
70
mΩ
1
V
1.5
A
210
pF
A
mΩ
12
0.79
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
VGS=10V, ID=3.5A
Coss
V
TJ=55°C
VSD
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
170
VGS=0V, VDS=15V, f=1MHz
S
35
pF
23
pF
3.5
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.5A
1.7
0.55
nC
1
nC
4.5
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=3.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs
2.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=4.2Ω,
RGEN=3Ω
1.5
ns
18.5
ns
15.5
ns
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar 2011
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Page 2 of 5
AO6810
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
VDS=5V
7V
12
4V
4.5V
8
6
9
ID(A)
ID (A)
3.5V
6
4
3
125°C
25°C
2
VGS=3V
0
0
0
1
2
3
4
0.5
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
70
60
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
50
40
VGS=10V
30
VGS=10V
ID=3.5A
1.6
1.4
1.2
VGS=4.5V
ID=2A
17
5
2
10
1
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
120
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=3.5A
1.0E+01
40
1.0E+00
125°C
80
IS (A)
RDS(ON) (mΩ
Ω)
100
1.0E-01
125°C
1.0E-02
60
25°C
25°C
1.0E-03
40
1.0E-04
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO6810
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
10
VDS=15V
ID=3.5A
250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
200
150
100
Coss
2
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
100
Power (W)
ID (Amps)
10.0
10
10s
1
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 1: Mar 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 5
AO6810
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Mar 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5