Datasheet

AO4443
40V P-Channel MOSFET
General Description
Product Summary
The AO4443 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
VDS
-40V
-6A
RDS(ON) (at VGS=-10V)
< 42mΩ
RDS(ON) (at VGS =-4.5V)
< 63mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±20
V
-6
ID
TA=70°C
Maximum
-40
-5
A
IDM
-40
Avalanche Current C
IAS, IAR
20
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
20
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 5: June 2015
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4443
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
40
VGS=-10V, ID=-6A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
gFS
Forward Transconductance
VDS=-5V, ID=-6A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
±100
nA
-2.6
V
35
42
53
65
46.5
63
mΩ
-1
V
-3.5
A
A
-0.76
750
940
1175
97
7
14
pF
21
Ω
nC
17.3
22
Qg(4.5V)
8.4
11
VGS=-10V, VDS=-20V, ID=-6A
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
VGS=-10V, VDS=-20V,
RL=3.35Ω, RGEN=3Ω
3.2
nC
4.3
nC
10.3
ns
4.3
ns
39
ns
46.5
IF=-6A, dI/dt=100A/µs
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
mΩ
S
72
VGS=0V, VDS=0V, f=1MHz
µA
-2
17
VGS=0V, VDS=-20V, f=1MHz
Units
V
VDS=-40V, VGS=0V
IGSS
RDS(ON)
Typ
17
ns
24
11.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: June 2015
www.aosmd.com
Page 2 of 5
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
-10V
-7V
VDS=-5V
-5V
-4.5V
30
-ID(A)
-ID (A)
30
20
-4V
20
125°C
25°C
10
10
VGS=-3.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
2
65
Normalized On-Resistance
60
55
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
50
45
40
VGS=-10V
35
30
1.8
VGS=-10V
ID=-6A
1.6
17
5
2
VGS=-4.5V
10
1.4
1.2
ID=-5A
1
0.8
0
3
6
9
12
15
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
100
1.0E+02
ID=-6A
1.0E+01
40
1.0E+00
125°C
-IS (A)
RDS(ON) (mΩ)
80
60
1.0E-02
125°C
1.0E-03
25°C
40
1.0E-01
25°C
1.0E-04
1.0E-05
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: June 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
VDS=-20V
ID=-6A
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
800
600
400
Coss
2
200
0
Crss
0
0
3
6
9
12
15
18
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
100.0
40
TA=25°C
1000
100µs
RDS(ON)
limited
Power (W)
-ID (Amps)
10.0
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
100
10
10s
DC
1
10
1
0.00001
100
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJA Normalized Transient
Thermal Resistance
35
10000
10µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: June 2015
www.aosmd.com
Page 4 of 5
AO4443
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 5: June 2015
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 5 of 5