AO4294 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 100V 11.5A RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications SOIC-8 D Top View D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4294 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche energy VDS Spike Power Dissipation B L=0.1mH C 10µs TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: April 2015 Steady-State Steady-State A IAS 20 A EAS 20 mJ VSPIKE 120 V 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s V 46 PD TA=70°C ±20 9 IDM Avalanche Current C Units V 11.5 ID TA=70°C C Maximum 100 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=9.5A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance nA 2.4 V 10 12 17.5 21 12.5 15.5 mΩ 1 V 4 A mΩ 45 VGS=0V, VDS=50V, f=1MHz f=1MHz ±100 1.9 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA 5 VGS=10V, ID=11.5A VDS=5V, ID=11.5A Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ 2420 pF 170 pF 11 pF 0.55 0.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33 50 nC Qg(4.5V) Total Gate Charge 15 25 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=11.5A 0.2 S nC 7 nC Gate Drain Charge 4 nC Turn-On DelayTime 8 ns 3 ns 25 ns VGS=10V, VDS=50V, RL=4.35Ω, RGEN=3Ω 4 ns IF=11.5A, dI/dt=500A/µs 25 Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/µs 110 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 90 100 4.5V VDS=5V 4V 80 60 60 3.5V ID(A) ID (A) 80 6V 70 50 40 125°C 40 30 3V 20 10 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 2 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 2.2 VGS=4.5V 15 RDS(ON) (mΩ) 3 10 VGS=10V 5 2 VGS=10V ID=11.5A 1.8 1.6 1.4 VGS=4.5V ID=9.5A 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 1.0E+01 ID=11.5A 1.0E+00 125°C 20 1.0E-01 IS (A) RDS(ON) (mΩ) 25 15 10 125°C 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: April 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=50V ID=11.5A Capacitance (pF) VGS (Volts) Ciss 2500 8 6 4 2000 1500 1000 2 500 Coss Crss 0 0 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs Power (W) ID (Amps) RDS(ON) limited 1ms 100 100 10 10ms TJ(Max)=150°C TA=25°C 0.1 DC 0.0 0.01 ZθJA Normalized Transient Thermal Resistance 80 10µs 10µs 1.0 1 60 1000 100.0 10 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 20 1 0.0001 0.001 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: April 2015 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: April 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5