AOSMD AO4588

AO4588
30V N-Channel MOSFET
General Description
Product Summary
The AO4588 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
20A
RDS(ON) (at VGS=10V)
< 4.8mΩ
RDS(ON) (at VGS =4.5V)
< 6.2mΩ
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±20
V
20
ID
TA=70°C
Maximum
30
A
15.5
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
101
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 0: June 2011
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
140
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4588
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
Max
V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
TJ=55°C
µA
5
VDS=0V, VGS= ±16V
10
VGS=10V, ID=20A
1.85
2.4
3.95
4.8
6
7.3
VGS=4.5V, ID=16A
4.9
6.2
VDS=5V, ID=20A
85
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
4.5
A
1950
2445
2940
pF
270
390
510
pF
130
220
310
pF
1.2
2.4
3.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
32
41
50
nC
Qg(4.5V) Total Gate Charge
15
19
24
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
nC
7.2
nC
Qgd
Gate Drain Charge
6.6
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
5
ns
tD(off)
Turn-Off DelayTime
41.5
ns
tf
Turn-Off Fall Time
10.5
ns
trr
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17.5
22
31
40
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: June 2011
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Page 2 of 6
AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
VDS=5V
3.5V
4V
80
60
4.5V
ID(A)
ID (A)
60
3V
40
40
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
Normalized On-Resistance
1.8
VGS=4.5V
5
RDS(ON) (mΩ )
2
4
VGS=10V
3
VGS=10V
ID=20A
1.6
1.4
17
5
2
VGS=4.5V
10
1.2
ID=16A
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
8
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
4
1.0E-04
25°C
1.0E-05
2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: June 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3600
10
VDS=15V
ID=20A
3200
Ciss
2800
Capacitance (pF)
VGS (Volts)
8
6
4
2400
2000
1600
1200
Coss
800
2
400
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
1000
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
TA=25°C
100.0
TA=100°C
TA=150°C
TA=125°C
10
10µs
RDS(ON)
limited
100
ID (Amps)
IAR (A) Peak Avalanche Current
Crss
0
100µs
10.0
1m
10ms
1.0
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
0.0
1
0.01
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: June 2011
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Page 4 of 6
AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: June 2011
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Page 5 of 6
AO4588
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: June 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6