AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS = -30V ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) -RoHS Compliant -AO4435 is Halogen Free 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation A -30 Units V ±25 V Maximum -10.5 TA=70°C B TA=25°C ID -8 IDM -80 3.1 PD TA=70°C A W 2.0 Avalanche Current B IAR -20 A Repetitive avalanche energy 0.3mH B EAR 60 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4435 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 Gate-Body leakage current VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -80 VGS = -20V, ID = -11A TJ=125°C 27 36 Maximum Body-Diode Continuous Current mΩ 22 S -0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance A VGS = -5V, ID = -5A IS Rg 14 18 IS = -1A,VGS = 0V Output Capacitance 11 15 VDS = -5V, ID = -10A Reverse Transfer Capacitance V 19 Diode Forward Voltage Crss nA -3 15 Forward Transconductance Coss ±100 -2.3 VGS = -10V, ID = -10A gFS µA -5 Gate Threshold Voltage VSD Units -1 TJ = 55°C VGS(th) Static Drain-Source On-Resistance Max V VDS = -30V, VGS = 0V IGSS RDS(ON) Typ 1130 VGS=0V, VDS=-15V, f=1MHz -1 V -3.5 A 1400 pF 240 pF 155 pF 5.8 8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 24 nC Qg(4.5V) Total Gate Charge 9.5 Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A 1 5.5 nC Qgd Gate Drain Charge 3.3 nC tD(on) Turn-On DelayTime 8.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 12 VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω 8.5 ns 18 ns 7 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev7: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 VDS= -5V -10V -8V 60 -6V -ID(A) -ID (A) 60 40 40 -4.5V 125°C 20 20 VGS= -4V 25°C 0 0 0 1 2 3 4 5 0 1 40 3 4 5 6 1.6 Normalized On-Resistance VGS=-5V 35 30 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 25 20 VGS=-10V 15 10 VGS=-10V ID=-10A 1.4 VGS=-20V ID=-11A 1.2 1.0 VGS=-5V ID=-5A 0.8 VGS=-20V 5 0.6 0 5 10 15 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 55 1E+01 ID=-11A 1E+00 45 35 -IS (A) RDS(ON) (mΩ ) 1E-01 25 125°C 1E-02 25°C 1E-03 125°C 1E-04 15 1E-05 25°C 1E-06 5 2 4 6 8 10 12 14 16 18 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 -VGS (Volts) Capacitance (pF) VDS=-15V ID=-10A 8 6 4 2 Ciss 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 1000 100 30 TJ(Max)=150°C TA=25°C 10µs 10 100µs 1 1ms 10ms 100ms TJ(Max)=150°C TA=25°C 0.1 Power (W) -ID (Amps) 25 1000 RDS(ON) limited 0.1 1 10 1 0.00001 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.01 Zθ JA Normalized Transient Thermal Resistance 20 -VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 G ate C harge Test C ircuit & W aveform Vgs Qg -10V - - VD C + VD C Qgd Q gs Vds + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com