AO4718 30V N-Channel MOSFET SRFET General Description TM Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF ±20 IDSM 12 IDM 80 IAS, IAR 25 V 15 TA=70°C Pulsed Drain Current B Avalanche Current B B Avalanche energy L=0.3mH TA=25°C Power Dissipation 30 VGS TA=25°C Units Maximum EAS, EAR 94 TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. W 2.0 Junction and Storage Temperature Range Maximum Junction-to-Ambient A mJ 3.1 PD TA=70°C A RθJA RθJL -55 to 150 Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4718 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 80 TJ=125°C VGS=10V, ID=15A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=12A gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 10 0.1 µA 1.65 2.5 V 7.3 9 10.3 13 10.8 14 mΩ 0.5 V 4 A A VGS=0V, VDS=0V, f=1MHz mΩ 43 0.41 1620 VGS=0V, VDS=15V, f=1MHz mA S 1950 pF 382 pF 162 pF 1.2 Ω 1.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24.7 32 nC Qg(4.5V) Total Gate Charge 12 16 nC VGS=10V, VDS=15V, ID=15A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω IF=15A, dI/dt=300A/µs 4.0 nC 5.6 nC 6.3 ns 9.3 ns 21.6 ns 5.4 ns 19 23 36.4 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev3: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V 60 20 ID(A) 4V ID (A) VDS=5V 25 4.5V 40 15 3.5V 10 20 125° 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1 2 VDS (Volts) 4 5 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 15 Normalized On-Resistance 1.8 VGS=4.5V 13 RDS(ON) (mΩ ) 3 11 9 VGS=10V 7 5 ID=15A VGS=10V 1.6 1.4 1.2 ID=12A VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 ID=15A 1.0E+01 125°C 25 20 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=15V ID=15A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Coss 2 500 0 Crss 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10.0 10µs 100µ 1m 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 DC 1 VDS (Volts) 1s 10s 10 Power (W) ID (Amps) 5 60 40 20 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4718 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclam ped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com