AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 0.8 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.25 -55 to 150 Symbol A V 10 PD TA=70°C A ±12 1.7 ID IDM B Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 2.1 TA=70°C TA=25°C Power Dissipation Maximum 55 RθJA RθJL Typ 75 115 48 °C Max 100 150 60 Units °C/W °C/W °C/W AO3422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=10mA, VGS=0V 1 IGSS Gate-Source leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=4.5V, ID=2.1A TJ=125°C VGS=2.5V, ID=1.5A gFS Forward Transconductance Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=2.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 5 1.3 ±100 nA 2 V 125 160 175 210 157 200 mΩ 1 V 1 A 300 pF 11 0.78 VGS=4.5V, VDS=27.5V, ID=2.1A mΩ S 31 pF 12.6 VGS=0V, VDS=0V, f=1MHz µA A 214 VGS=0V, VDS=25V, f=1MHz Units V VDS=44V, VGS=0V Zero Gate Voltage Drain Current VSD Max 55 IDSS IS Typ pF 1.3 3 Ω 2.6 3.3 nC 0.6 nC Qgd Gate Drain Charge 0.8 nC tD(on) Turn-On DelayTime 2.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=2.1A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=2.1A, dI/dt=100A/µs 17 VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω 2.4 ns 16.5 ns 2 ns 30 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Sep 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 10 10V 3.5V 8 6 2.5V ID(A) ID (A) VDS=5V 6 5V 4 4 125°C 2 VGS=2V 2 25°C 0 0 0 1 2 3 4 5 1 1.25 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics 200 2 180 1.8 Normalized On-Resistance RDS(ON) (mΩ) VDS (Volts) Fig 1: On-Region characteristics 1.5 VGS=2.5V 160 140 120 VGS=4.5V VGS=4.5 1.6 1.4 VGS=2.5V 1.2 1 100 0 1 2 3 4 0.8 5 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 1E+00 310 1E-01 260 IS (A) RDS(ON) (mΩ) 125°C ID=2.3A 125°C 210 160 1E-02 25°C 1E-03 110 25°C 1E-04 60 1E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.4 AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 360 VDS=27.5V ID=2.1A Ciss 320 Capacitance (pF) VGS (Volts) 4 3 2 280 240 200 160 Coss 120 Crss 80 1 40 0 0 0 1 2 Qg (nC) Figure 7: Gate-Charge Characteristics 0 3 Power (W) ID (Amps) 10ms 20 25 30 TJ(Max)=150°C TA=25°C 100µs 0.1s 15 15 TJ(Max)=150°C TA=25°C 10.0 1.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 5 1ms 1s 10 5 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 AO3422 c Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC Rg 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd VDC - IF trr dI/dt IRM Vds Vdd