AO4938 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4938 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1(N-Channel) VDS= 30V FET2(N-Channel) 30V ID= 8.8A (VGS=10V) 8A (VGS=10V) RDS(ON) RDS(ON) < 16mΩ (VGS=10V) < 19mΩ (VGS=10V) < 22mΩ (VGS=4.5V) < 28mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Bottom View Top View D2 D1 G2 S2/D1 S2/D1 D2 G1 S1 TM D2 G2 G1 S2/D1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current ±20 ±20 V 8.8 8 7.1 6.5 IDM 60 40 IAS, IAR 21 13 A EAS, EAR 66 25 mJ 2 2 1.3 1.3 ID TA=70°C C Avalanche energy L=0.3mH C TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Mar. 2011 Units V VGS TA=25°C Avalanche Current C Power Dissipation B Max FET2 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 A W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 8 AO4938 FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250uA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.1 VGS=10V, VDS=5V 60 V TJ=125°C VGS=10V, ID=8.8A 20 100 nA 2.2 V 13.3 16 20 25 22 A Static Drain-Source On-Resistance VGS=4.5V, ID=7A 18 gFS Forward Transconductance VDS=5V, ID=8.8A 29 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.41 1267 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA 1.65 RDS(ON) Output Capacitance Units 0.1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ mΩ mΩ S 0.5 V 3.5 A 1600 pF 308 pF 118 pF Ω 1.3 2.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 30 Qg(4.5V) Total Gate Charge 10.4 nC VGS=10V, VDS=15V, ID=8.8A nC Qgs Gate Source Charge 3 nC Qgd Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 5.2 ns tr Turn-On Rise Time 3.8 ns tD(off) Turn-Off DelayTime 21.2 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.8A, dI/dt=300A/µs 11.2 Qrr Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=300A/µs 10.5 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 4.4 ns 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011 www.aosmd.com Page 2 of 8 AO4938 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 5V 6V 25 80 4.5V 7V 20 ID(A) ID (A) 60 4V 15 40 10 3.5V 20 5 VGS=3V 25°C 0 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 20 18 RDS(ON) (mΩ Ω) 125°C VGS=4.5V 16 14 12 VGS=10V 10 VGS=10V ID=8.8A 1.6 1.4 17 5 2 VGS=4.5V10 1.2 ID=7A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 40 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8.8A 35 1.0E+01 30 1.0E+00 25 125°C 20 IS (A) RDS(ON) (mΩ Ω) 125°C 40 15 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 10 1.0E-04 5 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 8 AO4938 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=8.8A 1500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 Coss 500 2 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 25 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 1ms 10ms TJ(Max)=150°C TA=25°C 100 Power (W) 100µs 1.0 0.1 TA=25°C 10µs RDS(ON) limited 10.0 ID (Amps) Crss 0 0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 3: Mar. 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 8 AO4938 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A ID(ON) Min Conditions gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance V 5 1.2 VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.4 V 15.5 19 21 25 18.6 28 40 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Units 1 TJ=125°C Static Drain-Source On-Resistance Max 30 TJ=55°C RDS(ON) Coss Typ A 30 0.75 mΩ mΩ S 1 V 2.5 A 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5 ns 3.5 ns 19 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011 www.aosmd.com Page 5 of 8 AO4938 FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 25 25 3.5V 5V 20 ID(A) ID (A) 20 3V 15 15 10 10 VGS=2.5V 5 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 125°C 5 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 40 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8A 1.0E+01 35 40 1.0E+00 25 125°C -IS (A) RDS(ON) (mΩ Ω) 30 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 25°C 1.0E-04 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 6 of 8 AO4938 FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 800 600 400 Coss 2 200 0 0 Crss 0 3 6 g (nC) 9 12 Q Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1ms 10ms 1.0 0.1 DC TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 30 10 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Mar. 2011 www.aosmd.com Page 7 of 8 AO4938 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3: Mar. 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 8 of 8