AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical. VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55Ω (VGS = 4.5V) RDS(ON) < 0.68Ω (VGS = 2.5V) RDS(ON) < 0.80Ω (VGS = 1.8V) -RoHS Compliant -AO5804EL is Halogen Free ESD PROTECTED! D1 SC-89-6 S1 D2 G1 D2 G1 S2 G2 D1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec V Drain-Source Voltage DS VGS Gate-Source Voltage TA=25°C Continuous Drain A, F Current TA=70°C TA=25°C Power Dissipation PD TA=70°C TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State C ±8 V Steady-State Alpha & Omega Semiconductor, Ltd. 0.5 0.45 A 3 Junction and Storage Temperature Range Maximum Junction-to-Lead 20 Units V 0.5 ID IDM S2 Steady State 0.5 Pulsed Drain Current B A G2 RθJA RθJL 0.38 0.28 0.24 0.18 -55 to 150 Typ 275 360 300 W °C Max 330 450 350 Units °C/W °C/W °C/W www.aosmd.com AO5804E Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max Units 20 V VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.45 ID(ON) On state drain current VGS=4.5V, VDS=5V 3 TJ=55°C 5 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VGS=4.5V, ID=0.5A µΑ ±1 µA ±100 µA 1 V 0.6 A 0.4 0.55 0.6 0.85 VGS=2.5V, ID=0.5A 0.48 0.68 Ω VGS=1.8V, ID=0.3A 0.6 0.8 Ω Forward Transconductance VDS=5V, ID=0.5A 1.5 VSD Diode Forward Voltage IS=0.1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance S 35 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg 1 V 0.4 A 45 pF 8 pF 6 pF 0.63 VGS=4.5V, VDS=10V, ID=0.5A Ω 1 nC Qgs Gate Source Charge 0.08 nC Qgd Gate Drain Charge 0.16 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=0.5A, dI/dt=100A/µs 8 Qrr Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs 2 VGS=5V, VDS=10V, RL=50Ω, RGEN=3Ω 3.3 ns 78 ns 32 ns 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 0.5 B: Repetitive rating, pulse width limited by junction temperature. 0.45 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment 0.28with T A=25°C. The SOA curve provides a single pulse rating. 0.18 F. The maximum current rating is limited by bond-wires Rev3: Aug 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5804E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 3 4.5V VDS=5V 2.5V 1.5 3.5V 2 25°C ID(A) ID (A) 2V Vgs=1.5V 125°C 1 1 0.5 1V 0 0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1.8 RDS(ON) (Ω ) 0.7 Normalized On-Resistance 0.8 VGS=1.8V 0.6 VGS=2.5V 0.5 0.4 VGS=4.5V 0.3 0.2 VGS=4.5V ID=0.5A 1.6 1.4 VGS=1.8V ID=-0.3A 1.2 VGS=2.5V ID=0.5A 1 0.8 0.6 0 0.2 0.4 0.6 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1 0.5 0.45 1.0E+00 ID=0.5A 1.0E-01 0.8 125°C 0.28 125°C 0.18 1.0E-02 0.6 IS (A) RDS(ON) (Ω ) 25 25°C 1.0E-03 0.4 1.0E-04 25°C 0.2 1.0E-05 0 1.0E-06 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5804E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 5 VDS=10V ID=0.5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 40 20 Coss 1 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 14 RDS(ON) limited 10 100µs 1ms 0.1s DC 0.1 0.1 1 VDS (Volts) 6 4 1s 10s 2 10 0 0.0001 100 0.001 0.01 1 10 100 0.5 0.45 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=450°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.28 0.18 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 10ms TJ(Max)=150°C TA=25°C 0.0 0.01 Power (W) ID (Amps) 1.0 TJ(Max)=150°C TA=25°C 12 10µs Zθ JA Normalized Transient Thermal Resistance 5 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5804E Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Isd L + Vdd Ig Alpha & Omega Semiconductor, Ltd. t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com