AOC2423 20V P-Channel MOSFET General Description Product Summary The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. VDS ID (at VGS=-10V) -20V -2A RDS(ON) (at VGS=-10V) < 80mΩ RDS(ON) (at VGS=-4.5V) < 95mΩ RDS(ON) (at VGS=-2.5V) < 120mΩ Typical ESD protection MCSP 0.97x0.97A_4 Top View HBM Class2 D Bottom View Top View Bottom View 3 2 S S D G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range Maximum -20 Units V VGS ID ±12 V IDM PD -20 TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Rev 0 : Oct. 2012 -2 www.aosmd.com Typ 110 160 A 0.6 W -55 to 150 °C Max 140 200 Units °C/W °C/W Page 1 of 5 AOC2423 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA TJ=125°C VGS=-4.5V, ID=-1A Gate Source Charge Qgd mΩ mΩ VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 80 107 120 DYNAMIC PARAMETERS Input Capacitance Ciss Qg(4.5V) Total Gate Charge 65 86.5 92 IS=-1A,VGS=0V Gate resistance V 6.5 Diode Forward Voltage Rg µA mΩ VSD Reverse Transfer Capacitance ±10 -1.2 95 VDS=-5V, ID=-1A Crss -0.85 µA 74 Forward Transconductance Output Capacitance Units VGS=-2.5V, ID=-1A gFS Coss -5 -0.5 VGS=-10V, ID=-1A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-10V, VDS=-10V, ID=-1A -0.74 S -1 V 470 pF 92 pF 60 pF 12.5 Ω 10 nC 5 nC 2 nC Gate Drain Charge 0.5 nC tD(on) Turn-On DelayTime 7.5 ns 10 ns 50 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 24 ns trr IF=-1A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/µs 8.5 ns nC Qrr VGS=-10V, VDS=-10V, RL=10Ω, RGEN=3Ω 3 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct. 2012 www.aosmd.com Page 2 of 5 AOC2423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 -10V -3.5V VDS=-5V 15 -2.5V 10 -2V 15 -ID(A) -ID (A) -4.5V 10 5 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 0 5 140 1 1.5 2 2.5 3 Normalized On-Resistance 1.6 120 RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-2.5V 100 VGS=-4.5V 80 60 VGS=-10V 40 VGS=-10V ID=-1A 1.4 1.2 VGS=-4.5V ID=-1A 1 VGS=-2.5V ID=-1A 0.8 20 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 180 1.0E+01 ID=-1A 160 1.0E+00 1.0E-01 120 125°C 100 80 -IS (A) RDS(ON) (mΩ Ω) 140 125°C 1.0E-02 1.0E-03 25°C 60 25°C 1.0E-04 40 1.0E-05 20 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOC2423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-10V ID=-1A 8 Capacitance (pF) -VGS (Volts) 600 6 4 Ciss 400 Coss 200 2 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 50 100.0 Power (W) RDS(ON) limited 1.0 TJ(Max)=150°C TA=25°C 40 10µs 100µs 10.0 -ID (Amps) Crss 0 1ms 30 20 10ms 0.1 10 TJ(Max)=150°C TA=25°C 10s DC 0 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-toAmbient Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=200°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 0: Oct. 2012 www.aosmd.com Page 4 of 5 AOC2423 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Oct. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5