AOC2411 30V P-Channel MOSFET General Description The AOC2411 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Features Vds -30V ID (at VGS=-4.5V) -3.4A RDS(ON) (at VGS=-4.5V) < 45mΩ RDS(ON) (at VGS=-2.5V) < 60mΩ Bottom View 3 Equivalent Circuit Top View D 2 D D S G 4 Pin1(G) 1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Maximum -30 Units V VGS ±12 V ID -3.4 Source Current (Pulse) Note2 ISM -52 Power Dissipation Note1 T =25°C A PD 0.8 Junction and Storage Temperature Range TJ, TSTG Gate-Source Voltage Source Current (DC) Note1 Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 Maximum Junction-to-Ambient Note1 Maximum Junction-to-Foot(Drain) TA=25°C Symbol t ≤ 5s Steady-State Steady-State RθJA RθJF A W -55 to 150 Typ 75 130 16 °C Max 90 155 20 Units °C/W °C/W °C/W Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max 1/4 www.freescale.net.cn AOC2411 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Source-Source Breakdown Voltage IDSS Zero Gate Voltage Source Current Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 TJ=55°C IGSS Gate leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA RDS(ON) Static Source to Source On-Resistance -5 -0.6 VGS=-4.5V, ID=-1A TJ=125°C VGS=-2.5V, ID=-1A -1 nA -1.4 V 37 45 52 63 45 60 Forward Transconductance VDS=-5V, ID=-1A 7.5 VFSD Diode Forward Voltage ID=-1A,VGS=0V, -0.7 -1 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ S V 1253 1630 pF VGS=0V, VDS=-15V, f=1MHz, 167 220 pF 105 150 pF VGS=0V, VDS=0V, f=1MHz 16.7 34 Ω 12.5 20 SWITCHING PARAMETERS Note1 Qg Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-1A Qgs Gate Source Charge Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 14 tr Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Note 1: Guaranteed by design µA ±100 gFS DYNAMIC PARAMETERS Note1 Ciss Input Capacitance Units VGS=-4.5V, VDS=-10V, RL=10Ω, ID=1A, RGEN=6Ω IF=-1A, dI/dt=100A/µs 2 nC nC nC 25 12 20 150 225 72 110 14.5 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE 2/4 www.freescale.net.cn ns ns AOC2411 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 -10V -6V 30 -4.5V 40 25 -ID(A) -2.5V -ID (A) VDS=-5V 35 50 30 20 125°C 15 20 25°C 10 10 5 VGS=-1.5V 0 0 0 1 2 3 4 0 5 0.5 60 1.5 2 2.5 3 1.6 Normalized On-Resistance 55 RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-2.5V 50 45 40 35 1.4 VGS=-4.5V ID=-1A 1.2 VGS=-2.5V ID=-1A 1 VGS=-4.5V 30 0.8 0 2 4 6 8 0 -IS (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=-1A 1.0E+00 80 125°C 125°C -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 60 40 1.0E-02 1.0E-03 25°C 1.0E-04 20 25°C 1.0E-05 0 1.0E-06 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.0 AOC2411 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1600 VDS=-10V ID=-1A Ciss 4 Capacitance (pF) -VGS (Volts) 1200 3 2 800 Crss 400 1 Coss 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 100.0 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 100µs RDS(ON) limited 30 50 10µs 10.0 5 40 1.0 10ms DC Power (W) -ID (Amps) 1ms 30 20 100ms 0.1 10 TJ(Max)=150°C TC=25°C 0.0 0 0.01 0.1 1 10 100 0.001 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/(Ton+T) TJ,PK=TA+PD.ZθJA.RθJA RθJA=155°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 4/4 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 10 100 www.freescale.net.cn 1000