AOT440 40V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT440 is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 40V 105A RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS = 4.5V) <6mΩ 100% UIS Tested 100% Rg Tested Top View TO220 Bottom View D D D G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current TC=25°C Maximum 40 ±20 C 82 IDM TA=25°C A 330 15.5 IDSM TA=70°C V 105 ID TC=100°C Units V A 12 Avalanche Current C IAS,IAR 40 A Avalanche energy L=0.1mH C EAS,EAR 80 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev0: June 2009 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 75 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 150 PD -55 to 175 Typ 12 48 0.6 °C Max 15 60 1 Units °C/W °C/W °C/W Page 1 of 7 AOT440 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=5V ,ID=250µA RDS(ON) Static Drain-Source On-Resistance 50 100 1.3 TJ=125°C VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 1.8 µA nA 2.3 V 330 VGS=10V, ID=20A VSD Units V 10 VGS=10V, VDS=5V gFS Max 40 TJ=55°C IGSS IS Typ VGS=10V, VDS=20V, ID=20A A 3.9 4.7 6.1 7.3 4.8 6 mΩ 1 V mΩ 95 0.65 S 105 A 3730 4666 5600 pF 520 744 970 pF 160 269 380 pF 0.5 1 1.5 Ω 60 75 90 nC 28 36 45 nC 8.5 10.5 12.5 nC 10 17 25 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 15 ns 18 ns 52 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 16 19 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 30 38 45 23 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: June 2009 www.aosmd.com Page 2 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 10V 4V 5V 120 VDS=5V 120 3.5V 6V 90 ID(A) ID (A) 90 60 60 VGS=3V 125°C 30 30 25°C 0 0 0 1 2 3 4 1 5 7 4 5 Normalized On-Resistance 2 6 VGS=4.5V 5 4 VGS=10V 3 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 1.0E+02 12 ID=20A 1.0E+01 10 40 1.0E+00 8 125°C IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ) 2 6 4 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: June 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) 6000 VDS=20V ID=20A 8 6 4 2 4000 3000 1000 Crss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 80 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 5000 1000.0 10µs RDS(ON) limited 10µs 1ms 10.0 DC 1.0 4000 TJ(Max)=175°C TC=25°C 100µs 10ms TJ(Max)=175°C TC=25°C Power (W) 100.0 ID (Amps) Coss 2000 0 17 5 2 10 3000 2000 1000 0.1 0.0 0.01 0.1 1 10 100 VDS (Volts) 10 1 0 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Ciss 5000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: June 2009 www.aosmd.com Page 4 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 TA=25°C 100 TA=100°C TA=150°C 10 TA=125°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 150 120 90 60 30 0 1 1 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 120 25 50 75 100 150 175 1000 TA=25°C 100 80 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 60 40 100 17 5 2 10 10 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 0.01 0.1 1 10 100 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 0.001 0.01 Single Pulse 0.1 1 Ton 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: June 2009 www.aosmd.com Page 5 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 12 125ºC 20 Irm 1.5 10 8 6 S 4 4 0 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 60 5 10 15 20 30 25 2.5 Is=20A 125ºC 12 20 2 125ºC 50 trr 30 125ºC Qrr 6 15 1.5 25ºC S 9 25ºC trr (ns) 40 Irm (A) Qrr (nC) 25 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15 70 0.5 125ºC 2 0 1 25ºC 6 25ºC 10 25ºC 12 8 30 2 trr S Qrr 40 14 10 25ºC trr (ns) Qrr (nC) 50 2.5 125ºC di/dt=800A/µs 16 Irm (A) 60 18 125ºC di/dt=800A/µs 10 1 25ºC 20 S 25ºC Irm 10 3 0.5 125º 0 0 5 200 400 600 800 0 1000 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: June 2009 www.aosmd.com 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOT440 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: June 2009 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7