AOSMD AON2408

AON2408
20V N-Channel MOSFET
General Description
Product Summary
The AON2408 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
20V
8A
RDS(ON) (at VGS =4.5V)
< 14.5mΩ
RDS(ON) (at VGS =2.5V)
< 19mΩ
VDS
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
Pin 1
S
D
G
Pin 1
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0 : Dec 2011
Steady-State
A
2.8
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±12
6
IDM
TA=25°C
A
Units
V
8
ID
TA=100°C
C
Maximum
20
RθJA
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-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
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AON2408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
32
±100
nA
0.83
1.2
V
11.6
14.5
16.3
20.5
VGS=2.5V, ID=4A
15
19
mΩ
1
V
3.5
A
VGS=4.5V, ID=8A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=8A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
tD(on)
mΩ
S
782
pF
VGS=0V, VDS=10V, f=1MHz
158
pF
98
pF
VGS=0V, VDS=0V, f=1MHz
2.4
Ω
7
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=8A
1
nC
Gate Drain Charge
2.4
nC
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4.5
ns
28
ns
tf
Turn-Off Fall Time
6
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=8A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
2.7
ns
nC
VGS=4.5V, VDS=10V, RL=1.25Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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Page 2 of 6
AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
2.5V
4.5V
VDS=5V
3.5V
15
1.8V
ID(A)
ID (A)
30
20
10
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
Normalized On-Resistance
1.6
40
RDS(ON) (mΩ
Ω)
0.5
VGS=1.8V
30
20
VGS=2.5V
10
VGS=4.5V
1.4
VGS=2.5V
ID=4A
VGS=4.5V
ID=8A
1.2
VGS=1.8V
ID=2A
1
0.8
0
0
0
4
8
12
16
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
50
ID=8A
1.0E+01
RDS(ON) (mΩ
Ω)
IS (A)
40
30
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
20
25°C
1.0E-03
10
25°C
0
1.0E-04
1.0E-05
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Dec 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=10V
ID=8A
1000
4
Capacitance (pF)
VGS (Volts)
Ciss
3
2
800
600
400
Coss
1
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
10µs
100µs
1000
Power (W)
10µs
RDS(ON)
limited
10.0
ID (Amps)
Crss
200
1ms
1.0
10ms
TJ(Max)=150°C
TC=25°C
0.1
100
DC
10
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec 2011
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Page 4 of 6
AON2408
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds Isd
V gs
Ig
Rev 0: Dec 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 6